Ion Implantation with Heavy Halogenide Compounds
First Claim
1. A method of plasma doping comprising:
- a. providing a dopant heavy halogenide compound gas to a plasma chamber;
b. forming a plasma in the plasma chamber with the dopant heavy halogenide compound gas, the plasma generating desired dopant ions and heavy fragments of precursor dopant molecule; and
c. biasing a substrate in the plasma chamber so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and a composition of the dopant heavy halogenide compound is chosen so that an implant profile in the substrate is substantially determined by the desired dopant ions.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy halogenide compound gas and generates desired dopant ions and heavy fragments of precursor dopant molecule. A substrate in the plasma chamber is biased so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and composition of the dopant heavy halogenide compound is chosen so that the implant profile in the substrate is substantially determined by the desired dopant ions.
-
Citations
26 Claims
-
1. A method of plasma doping comprising:
-
a. providing a dopant heavy halogenide compound gas to a plasma chamber; b. forming a plasma in the plasma chamber with the dopant heavy halogenide compound gas, the plasma generating desired dopant ions and heavy fragments of precursor dopant molecule; and c. biasing a substrate in the plasma chamber so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and a composition of the dopant heavy halogenide compound is chosen so that an implant profile in the substrate is substantially determined by the desired dopant ions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A method of plasma doping comprising:
-
a. forming a surface layer on a substrate; b. providing a dopant heavy halogenide compound gas to a plasma chamber; c. forming a plasma in the plasma chamber with the dopant heavy halogenide compound gas, the plasma generating desired dopant ions and heavy fragments of precursor dopant molecule; and d. biasing a substrate in the plasma chamber so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions into the substrate to a desired projected range, wherein at least one of the ion energy and a composition of the dopant heavy halogenide compound is chosen so that the heavy fragments of precursor dopant molecule are implanted to a projected range that is within the surface layer formed on the surface of the substrate. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
-
-
22. A method of ion implanting comprising:
-
a. generating dopant and dopant heavy halogenide compound ions; b. accelerating the dopant and dopant heavy halogenide compound ions; and c. directing the accelerated dopant and dopant heavy halogenide compound ions to a substrate, thereby implanting the accelerated dopant and dopant heavy halogenide compound ions in the substrate with a desired energy, wherein at least one of the ion energy and a composition of the dopant heavy halogenide compound is chosen so that an implant profile in the substrate is substantially determined by the desired dopant ions. - View Dependent Claims (23, 24, 25, 26)
-
Specification