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Ion Implantation with Heavy Halogenide Compounds

  • US 20100022076A1
  • Filed: 07/22/2008
  • Published: 01/28/2010
  • Est. Priority Date: 07/22/2008
  • Status: Active Grant
First Claim
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1. A method of plasma doping comprising:

  • a. providing a dopant heavy halogenide compound gas to a plasma chamber;

    b. forming a plasma in the plasma chamber with the dopant heavy halogenide compound gas, the plasma generating desired dopant ions and heavy fragments of precursor dopant molecule; and

    c. biasing a substrate in the plasma chamber so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and a composition of the dopant heavy halogenide compound is chosen so that an implant profile in the substrate is substantially determined by the desired dopant ions.

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