SHOWERHEAD AND CHEMICAL VAPOR DEPOSITION APPARATUS INCLUDING THE SAME

• US 20100024727A1
• Filed: 03/19/2009
• Published: 02/04/2010
• Est. Priority Date: 08/04/2008
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Shim, Ji Hye, Kwon, Yong Il, Hong, Jong Pa, Won, Young Sun, Kim, Changsung Sean
• Application Number:
  US12/407,347
• Publication Number:
  US 20100024727A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/45502 Flow conditions in reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles

Abstract

Provided is a showerhead that can inject a reaction gas into a reaction chamber in a manner such that the injected reaction gas form a spiral vortex flow field. Therefore, the injected reaction gas can be mixed within a shorter distance, and thus the effective deposition radius of a wafer can be increased so that uniform-density deposition can be performed on the entire surface of the wafer using the mixed reaction gas.

Claims

1. A showerhead for CVD (chemical vapor deposition), comprising:

a head comprising a reservoir storing an introduced reaction gas, the head being configured to supply the reaction gas stored in the reservoir to a reaction chamber; and

a plurality of injection nozzles obliquely formed through a bottom surface of the head at a predetermined angle of attack in predetermined directions so as to inject the reaction gas to the reaction chamber and form a spiral vortex flow field by the injected reaction gas.

2. The showerhead of claim 1, wherein the head comprises:

a first head storing a first reaction gas and injecting the first reaction gas to the reaction chamber; and

a second head storing a second reaction gas and injecting the second reaction gas to the reaction chamber.

3. The showerhead of claim 2, further comprising a spacer disposed between the first and second heads for maintaining a predetermined gap between the first and second heads.

4. The showerhead of claim 2, wherein the first head comprises:

a first reservoir storing a first reaction gas; and

at least one first injection nozzle configured to inject the first reaction gas stored in the first reservoir to the reaction chamber,

wherein the second head comprises;

a second injection nozzle through which the first injection nozzle is inserted; and

a gas flow path formed between the second injection nozzle and the first injection nozzle inserted through the second injection nozzle, so as to inject a second reaction gas to the reaction chamber.

5. The showerhead of claim 4, wherein the first and second injection nozzles are inclined at a predetermined angle of attack in a predetermined direction such that the first and second reaction gases injected to the reaction chamber form a spiral vortex flow field.

6. The showerhead of claim 4, wherein the first and second injection nozzles are oriented such that the first and second reaction gases injected to the reaction chamber have a flowing direction opposite to a rotation direction of a susceptor disposed inside the reaction chamber.

7. The showerhead of claim 4, wherein the gas flow path comprises a gap having a predetermined size and formed between an inner surface of the second injection nozzle and an outer surface of the first injection nozzle.

8. The showerhead of claim 4, wherein the first injection nozzle is substantially coaxial with the second injection nozzle.

9. The showerhead of claim 4, wherein bottom ends of the first and second injection nozzles are located substantially at the same horizontal level.

10. A CVD apparatus comprising:

a reaction chamber comprising a susceptor;

a head comprising a reservoir storing an introduced reaction gas, the head being configured to supply the reaction gas stored in the reservoir to a reaction chamber; and

a plurality of injection nozzles obliquely formed through a bottom surface of the head at a predetermined angle of attack in predetermined directions so as to inject the reaction gas to the reaction chamber and form a spiral vortex flow field by the injected reaction gas.

11. The CVD apparatus of claim 10, wherein the head comprises:

a first head storing a first reaction gas and injecting the first reaction gas to the reaction chamber;

a second head storing a second reaction gas and injecting the second reaction gas to the reaction chamber; and

a spacer disposed between the first and second heads for maintaining a predetermined gap between the first and second heads.

12. The CVD apparatus of claim 11, wherein the first head comprises:

a first reservoir storing a first reaction gas; and

at least one first injection nozzle configured to inject the first reaction gas stored in the first reservoir to the reaction chamber,

wherein the second head comprises;

a second injection nozzle through which the first injection nozzle is inserted; and

a gas flow path formed between the second injection nozzle and the first injection nozzle inserted through the second injection nozzle so as to inject a second reaction gas to the reaction chamber.

13. The CVD apparatus of claim 12, wherein the first and second injection nozzles are inclined at a predetermined angle of attack in a predetermined direction such that the first and second reaction gases injected to the reaction chamber form a spiral vortex flow field.

14. The CVD apparatus of claim 12, wherein the first and second injection nozzles are oriented such that the first and second reaction gases injected to the reaction chamber have a flowing direction opposite to a rotation direction of the susceptor disposed inside the reaction chamber.

15. The CVD apparatus of claim 12, wherein the gas flow path comprises a gap having a predetermined size and formed between an inner surface of the second injection nozzle and an outer surface of the first injection nozzle.