METHOD FOR SELECTIVELY ETCHING AREAS OF A SUBSTRATE USING A GAS CLUSTER ION BEAM
First Claim
1. A method for selectively etching an area of a substrate, comprising:
- providing in a process chamber a substrate containing a first material having a film deposition surface and a second material having an etch surface;
forming a gas cluster ion beam (GCIB) from a pressurized gas comprising a deposition-etch gas; and
exposing the substrate to the GCIB to remove at least a portion of the second material from the etch surface and to deposit a thin film on the film deposition surface of the first material.
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Accused Products
Abstract
A method for selectively etching areas of a substrate is described. The method includes providing in a process chamber a substrate containing a first material having a film deposition surface and a second material having an etch surface. The method further includes forming a gas cluster ion beam (GCIB) from a pressurized gas containing a deposition-etch gas, and exposing the substrate to the GCIB to remove at least a portion of the second material from the etch surface and deposit a thin film on the film deposition surface of the first material. According to some embodiments, the deposition-etch gas may contain silicon (Si) and carbon (C), and it may possess a Si—C bond.
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Citations
23 Claims
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1. A method for selectively etching an area of a substrate, comprising:
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providing in a process chamber a substrate containing a first material having a film deposition surface and a second material having an etch surface; forming a gas cluster ion beam (GCIB) from a pressurized gas comprising a deposition-etch gas; and exposing the substrate to the GCIB to remove at least a portion of the second material from the etch surface and to deposit a thin film on the film deposition surface of the first material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for selectively etching areas of a substrate, comprising:
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providing in a process chamber a substrate containing a SiCOH-containing dielectric material having a film deposition surface and a second material having an etch surface, the second material containing single crystal silicon, polycrystalline silicon, amorphous silicon, silicon nitride, silicon carbide, or silicon carbonitride; forming a gas cluster ion beam (GCIB) from a pressurized gas comprising a deposition-etch gas containing silicon (Si), carbon (C), and a Si—
C bond, wherein gas clusters in the GCIB are accelerated by an acceleration voltage less than 30 keV;exposing the substrate to the GCIB to remove at least a portion of the second material from the etch surface and to deposit a thin film containing silicon and carbon on the film deposition surface of the dielectric material. - View Dependent Claims (18)
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19. A method for selectively etching areas on a patterned substrate, comprising:
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providing in a process chamber a patterned substrate containing a recessed feature having a bottom and a sidewall formed in a first material having a film deposition surface and a second material containing an etch surface at the bottom of the recessed feature; forming a gas cluster ion beam (GCIB) from a pressurized gas comprising a deposition-etch gas containing silicon (Si) and carbon (C); and exposing the patterned substrate to the GCIB to etch the second material from the etch surface and to deposit a thin film containing silicon and carbon on the film deposition surface.
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20. A method for processing a substrate, comprising:
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providing in a process chamber a substrate containing a first material having a film deposition surface and a second material having an etch surface; selecting first gas cluster ion beam (GCIB) processing parameters for selectively etching the etch surface and for depositing a first film on the film deposition surface; forming a first GCIB from a pressurized gas comprising a deposition-etch gas using the first GCIB processing parameters; exposing the substrate to the first GCIB using the first GCIB processing parameters to remove at least a portion of the second material from the etch surface and to deposit the first film on the film deposition surface of the first material; selecting second GCIB processing parameters for non-selectively depositing an additional film on the substrate; forming a second GCIB using the second GCIB processing parameters; and exposing the substrate to the second GCIB using the second GCIB processing parameters to deposit the additional film on the substrate. - View Dependent Claims (21, 22, 23)
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Specification