LIGHT-EMITTING DIODE IN SEMICONDUCTOR MATERIAL AND ITS FABRICATION METHOD

• US 20100025654A1
• Filed: 07/15/2009
• Published: 02/04/2010
• Est. Priority Date: 07/31/2008
• Status: Active Grant

• Current Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Original Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Inventors: ROBIN, Ivan-Christophe, Rothman, Johan, Ferret, Pierre
• Granted Patent: US 8,232,560 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0041 characterised by field-effect operation
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: Y10S 257/918 Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry

Abstract

The subject of the invention is a light-emitting diode comprising a structure (1) in semiconductor material of first conductivity type and means for electric polarisation of the diode. The structure (1) has a first face (2) of which a first region is in contact with a pad (5) in semiconductor material of second conductivity type opposite the first conductivity type,

• • the polarisation means comprise:
    • an electric contact (7) on the pad (5),
    • an electric contact(8) on the first face or on a second face (9) of the structure (1),
    • a gate (3) in electrically conductive material arranged on a second region of the first face and separated from the first face by an electrically insulating layer (4).

Claims

1. Light-emitting diode comprising a structure (1) in a semiconductor material of first conductivity type and means for electric polarisation of the diode, characterized in that:

the structure (1) has a first face (2) of which a first region is in contact with a pad (5) of semiconductor material having a second conductivity type opposite the first conductivity type,

the polarisation means comprise;

an electric contact (7) on the pad (5),

an electric contact (8) on the first face (2) or on a second face (9) of the structure (1),

a gate (3) in electrically conductive material arranged on a second region of the first face and separated from the first face by an electrically insulating layer (4).

2. Light-emitting diode according to claim 1, wherein the gate (3) is a disc having a central hole surrounding said pad (5).

3. Light-emitting diode according to either of claims 1 or 2, wherein the pad (5) of semiconductor material is housed in a cavity (6) formed from the first face (2) of the structure (1).

4. Light-emitting diode according to any of claims 1 to 3, wherein the semiconductor material of first conductivity type is chosen from among ZnO, GaN and GaAs.

5. Light-emitting diode according to claim 4, wherein the semiconductor material of said pad (5) is chosen from among ZnO, GaN, GaInN, GaAs and GaInAs.

6. Light-emitting diode according to any of claims 1 to 3, wherein the semiconductor material of first conductivity type is diamond.

7. Light-emitting diode according to claim 6, wherein the semiconductor material of said pad (5) is chosen from among MgO, ZnO and ZnMgO.

8. Light-emitting diode according to any of claims 1 to 7, wherein the gate (3) is in a material chosen from among gold, copper and platinum.

9. Light-emitting diode according to any of claims 1 to 8, wherein the electrically insulating layer (4) is in SiO₂.

10. Light-emitting diode according to any of claims 1 to 9, wherein the electric contacts (7, 8) are in a material chosen from among gold, copper and platinum.

11. Light-emitting diode according to any of claims 1 to 3, wherein the structure in semiconductor material is a quantum well structure.

12. Light-emitting diode according to claim 11, wherein the structure in semiconductor material is in ZnMgO with a quantum well (14) in ZnO.

13. Light-emitting diode according to either of claims 11 or 12, wherein the polarising means allow the quantum well (14) to be positioned at the p/n junction of the diode when the diode is polarised.

14. Method to fabricate a light-emitting diode from a structure (1) in semiconductor material of first conductivity type, comprising:

forming, in a first region of a first face (2) of the structure (1), a pad (5) of semiconductor material having a second type of conductivity opposite the first type of conductivity,

forming means to polarise the diode, comprising;

forming an electric contact (7) on the pad (5),

forming an electric contact (8) on the first face (2) or on a second face (9) of the structure (1),

forming a gate (3) in electrically conductive material arranged on a second region of the first face and separated from the first face by an electrically insulating layer (4).