Please download the dossier by clicking on the dossier button x
×

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20100025677A1
  • Filed: 07/29/2009
  • Published: 02/04/2010
  • Est. Priority Date: 07/31/2008
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating film over the gate electrode;

    an oxide semiconductor layer over the gate insulating film;

    a channel protective layer over the oxide semiconductor layer, wherein the channel protective layer overlaps a channel formation region of the oxide semiconductor layer;

    a first buffer layer and a second buffer layer over the oxide semiconductor layer; and

    a source electrode over the first buffer layer, and a drain electrode over the second buffer layer,wherein the first buffer layer and the second buffer layer include titanium oxide, and wherein a portion of the first buffer layer and a portion of the second buffer layer are in contact with an upper surface of the channel protective layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×