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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20100025679A1
  • Filed: 07/29/2009
  • Published: 02/04/2010
  • Est. Priority Date: 07/31/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device including a thin film transistor, the thin film transistor comprising:

  • a gate electrode layer;

    a gate insulating layer over the gate electrode layer;

    a semiconductor layer over the gate insulating layer;

    a first n-type buffer layer and a second n-type buffer layer over the semiconductor layer; and

    a source electrode layer over the first n-type buffer layer, and a drain electrode layer over the second n-type buffer layer,wherein each of the semiconductor layer, the first n-type buffer layer and the second n-type buffer layer comprises oxide semiconductor containing indium, gallium, and zinc, andwherein each of the first n-type buffer layer and the second n-type buffer layer has higher carrier concentration than the semiconductor layer.

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