THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
First Claim
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1. A thin-film transistor comprising respective elements of:
- three electrodes of a source electrode, a drain electrode and a gate electrode;
a channel layer; and
a gate insulating film, wherein the channel layer is formed by a metal oxide film including indium.
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Abstract
In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost.
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Citations
10 Claims
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1. A thin-film transistor comprising respective elements of:
- three electrodes of a source electrode, a drain electrode and a gate electrode;
a channel layer; and
a gate insulating film, wherein the channel layer is formed by a metal oxide film including indium. - View Dependent Claims (2, 3, 4, 5)
- three electrodes of a source electrode, a drain electrode and a gate electrode;
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6. A method of manufacturing a thin-film transistor comprising:
- forming a metal oxide film including indium and having a predetermined pattern on a substrate by effecting a sputtering process by means of target including indium under an atmosphere including oxygen gas, so that the channel layer and at least one electrodes of the source electrode, the drain electrode and the gate electrode are formed by the metal oxide containing indium;
wherein two or more metal oxide films having different electric resistivity are formed by varying a flow rate of oxygen gas, so that the channel layer and at least one of the respective electrodes are formed. - View Dependent Claims (7, 8, 9, 10)
- forming a metal oxide film including indium and having a predetermined pattern on a substrate by effecting a sputtering process by means of target including indium under an atmosphere including oxygen gas, so that the channel layer and at least one electrodes of the source electrode, the drain electrode and the gate electrode are formed by the metal oxide containing indium;
Specification