HIGH EFFICIENCY LIGHTING DEVICE

• US 20100025704A1
• Filed: 07/29/2008
• Published: 02/04/2010
• Est. Priority Date: 07/29/2008
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Huga Optotech Incorporated (Epistar Corporation)
• Inventors: Wang, Wei-Kai, Lin, Su-Hui, Shih, Wen-Chung
• Granted Patent: US 7,947,991 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A method for fabricating a high efficiency lighting device and the structure thereof are disclosed. The method includes the following steps: providing a light emitting diode structure; attaching a distributed-Bragg reflecting layer (DBR) to the light emitting diode structure by vapor deposition; and connecting the light emitting diode structure to a eutectic layer through the distributed-Bragg reflecting layer to form the high efficiency lighting device.

Claims

1. A method of fabricating a high efficiency lighting device, comprising the steps of:

providing a light emitting diode structure;

attaching a distributed-Bragg reflecting layer (DBR) to said light emitting diode structure by vapor deposition; and

connecting said light emitting diode structure to a eutectic layer through said distributed-Bragg reflecting layer to form said high efficiency lighting device.

2. The method of claim 1, wherein the step of forming said distributed-Bragg reflecting layer further comprises:

forming a plurality of high refraction layers and a plurality of low refraction layers in an alternating manner, so as to form a stacked thin film having an alternate high/low refraction pattern.

3. The method of claim 2, wherein said high refraction layers are titanium dioxide layers, and said low refraction layers are silicon dioxide layers.

4. The method of claim 2, wherein the step of forming said distributed-Bragg reflecting layer further comprises:

forming a micro-contact layer array in said stacked thin film, said micro-contact layers connecting said light emitting diode structure and said eutectic layer.

5. The method of claim 4, wherein said micro-contact layers are formed by using metal materials.

6. The method of claim 1, wherein said eutectic layer is made from gold/tin alloy.

7. The method of claim 1, wherein the thickness of said eutectic layer is around 1.5 micrometers.

8. A high efficiency lighting device, comprising:

a light emitting diode structure;

an eutectic layer; and

a distributed-Bragg reflecting layer (DBR) between said light emitting diode structure and said eutectic layer, said distributed-Bragg reflecting layer being attached to said light emitting diode structure by vapor deposition.

9. The device of claim 8, wherein said distributed-Bragg reflecting layer further comprises:

a plurality of high refraction layers; and

a plurality of low refraction layers;

wherein said high refraction layers and said low refraction layers are arranged in an alternating manner, so as to form a stacked thin film having an alternate high/low refraction pattern.

10. The device of claim 9, wherein said high refraction layers are titanium dioxide layers, and said low refraction layers are silicon dioxide layers.

11. The device of claim 9, wherein said distributed-Bragg reflecting layer further comprises:

a micro-contact layer array in said stacked thin film, said micro-contact layers connecting said light emitting diode structure and said eutectic layer.

12. The device of claim 11, wherein said micro-contact layers are formed by using metal materials.

13. The device of claim 8, wherein said eutectic layer is made from a gold/tin alloy.

14. The device of claim 8, wherein the thickness of said eutectic layer is about 1.5 micrometers.