HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING
First Claim
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1. A (B, Al, Ga, In)N light emitting diode (LED), comprised of:
- at least an n-type layer, an emitting layer, and a p-type layer;
wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of the LED and the N-face surface of the LED is comprised of structures that increase extraction efficiency of the light out of the N-face surface of the LED.
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Abstract
A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
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Citations
33 Claims
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1. A (B, Al, Ga, In)N light emitting diode (LED), comprised of:
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at least an n-type layer, an emitting layer, and a p-type layer; wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of the LED and the N-face surface of the LED is comprised of structures that increase extraction efficiency of the light out of the N-face surface of the LED. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of creating a (B, Al, Ga, In)N light emitting diode (LED), comprising:
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fabricating at least an n-type layer, an emitting layer, and a p-type layer of the (B, Al, Ga, In)N LED on a substrate; exposing a nitrogen face (N-face) surface of the LED by removing the substrate from the layers; and structuring the exposed N-face surface of the LED to increase extraction efficiency of the light out of the N-face surface of the LED. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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Specification