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Lateral Devices Containing Permanent Charge

  • US 20100025726A1
  • Filed: 04/30/2009
  • Published: 02/04/2010
  • Est. Priority Date: 07/30/2008
  • Status: Active Grant
First Claim
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1. A lateral semiconductor device comprising:

  • a body region connected to a drain region by a drift region; and

    permanent charge, sufficient to cause depletion in at least a portion of said drift layer at the interface between the drift layer and an insulation region.

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