Lateral Devices Containing Permanent Charge
First Claim
Patent Images
1. A lateral semiconductor device comprising:
- a body region connected to a drain region by a drift region; and
permanent charge, sufficient to cause depletion in at least a portion of said drift layer at the interface between the drift layer and an insulation region.
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Abstract
A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges are embedded in the insulation region, sufficient to cause inversion in the insulation region.
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Citations
37 Claims
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1. A lateral semiconductor device comprising:
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a body region connected to a drain region by a drift region; and permanent charge, sufficient to cause depletion in at least a portion of said drift layer at the interface between the drift layer and an insulation region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9-19. -19. (canceled)
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20. A lateral semiconductor device comprising:
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a carrier source; a semiconductor drift region laterally interposed between said carrier source and a drain region; and permanent charge, embedded in at least one insulating region which vertically adjoins said drift region, which balances charge in said drift region when said drift region is depleted. - View Dependent Claims (21, 22, 24, 25, 26, 27, 28, 29)
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23. (canceled)
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30-33. -33. (canceled)
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34. A method of increasing depletion in a drift layer of a lateral semiconductor device comprising:
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providing an insulation region in contact with said drift layer; effecting charge balancing by use of permanent charge positioned within said insulation. - View Dependent Claims (35, 36)
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37-38. -38. (canceled)
Specification