METHOD OF FORMING A LOW CAPACITANCE SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
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Abstract
In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the insulator.
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Citations
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21. A semiconductor device comprising:
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a substrate of a first conductivity type having a first surface; a first source region of the first conductivity type on the first surface of the substrate; a second source region of the first conductivity type on the first surface of the substrate wherein the second source region is spaced apart from the first source region; a gate structure overlying the first surface of the substrate, the gate structure having a first end overlying an edge of the first source region, a second end overlying an edge of the second source region, the gate structure having a first surface substantially parallel to the first surface of the substrate and facing away from the first surface of the substrate; a gate conductor of the gate structure overlying the substrate; an insulator layer of the gate structure on the gate conductor; a first conductor on the insulator layer; and a source conductor on the first conductor. - View Dependent Claims (22)
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Specification