TRENCH TYPE SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME
First Claim
1. A trench type semiconductor device comprising:
- a first base layer of a first conductivity type having high resistivity;
a gate insulating film placed on a bottom surface and a sidewall surface of a trench formed from a surface of the first base layer;
a gate electrode placed on the gate insulating film and fills up into the trench;
an interlayer insulating film placed by covering the gate electrode;
a second base layer of a second conductivity type placed on the surface of the first base layer, and is formed more shallowly than a bottom surface of the trench;
a first main electrode layer of the first conductivity type placed on a surface of the second base layer;
a first main electrode which passes through the first main electrode layer by applying the interlayer insulating film as a mask, is connected to the second base layer in a bottom surface of a self-aligned contact trench formed in the second base layer, and is connected to the first main electrode layer in the sidewall surface of the self-aligned contact trench;
a second main electrode layer placed at a back side of the first base layer; and
a second main electrode placed at the second main electrode layer.
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Accused Products
Abstract
The trench type semiconductor device includes a gate insulating film placed on the bottom surface and the sidewall surface of the trench formed from the surface of a first base layer; a gate electrode placed on the gate insulating film and fills up into a trench; an interlayer insulating film covering the gate electrode; a second base layer placed on the surface of the first base layer, and is formed more shallowly than the bottom surface of the trench; a source layer placed on the surface of the second base layer; a source electrode connected to the second base layer in the bottom surface of a self-aligned contact trench formed in the second base layer by applying the interlayer insulating film as a mask, and is connected to the source layer in the sidewall surface; a drain layer placed at the back side of the first base layer; and a drain electrode placed at the drain layer, for achieving the minute structure by the self-alignment, reducing the on resistance, and improving the breakdown capability, and providing a fabrication method for the same.
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Citations
23 Claims
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1. A trench type semiconductor device comprising:
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a first base layer of a first conductivity type having high resistivity; a gate insulating film placed on a bottom surface and a sidewall surface of a trench formed from a surface of the first base layer; a gate electrode placed on the gate insulating film and fills up into the trench; an interlayer insulating film placed by covering the gate electrode; a second base layer of a second conductivity type placed on the surface of the first base layer, and is formed more shallowly than a bottom surface of the trench; a first main electrode layer of the first conductivity type placed on a surface of the second base layer; a first main electrode which passes through the first main electrode layer by applying the interlayer insulating film as a mask, is connected to the second base layer in a bottom surface of a self-aligned contact trench formed in the second base layer, and is connected to the first main electrode layer in the sidewall surface of the self-aligned contact trench; a second main electrode layer placed at a back side of the first base layer; and a second main electrode placed at the second main electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A fabrication method for a trench type semiconductor device comprising:
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forming a first base layer of a first conductivity type with high resistivity; forming a gate insulating film on a bottom surface and a sidewall surface of a trench formed from a surface of the first base layer; forming the gate electrode for filling up into the trench on the gate insulating film; covering the gate electrode and forming an interlayer insulating film; forming a second base layer of a second conductivity type on the surface of the first base layer formed more shallowly than the bottom surface of the trench; forming a first main electrode layer of the first conductivity type on a surface of the second base layer; forming a first main electrode which passes through the first main electrode layer by applying the interlayer insulating film as a mask, is connected to the second base layer in the bottom surface of a self-aligned contact trench formed in the second base layer, and is connected to the first main electrode layer in a sidewall surface of the self-aligned contact trench; forming a second main electrode layer at a back side of the first base layer; and forming a second main electrode at the second main electrode layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification