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TRENCH TYPE SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME

  • US 20100025759A1
  • Filed: 07/29/2009
  • Published: 02/04/2010
  • Est. Priority Date: 07/29/2008
  • Status: Active Grant
First Claim
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1. A trench type semiconductor device comprising:

  • a first base layer of a first conductivity type having high resistivity;

    a gate insulating film placed on a bottom surface and a sidewall surface of a trench formed from a surface of the first base layer;

    a gate electrode placed on the gate insulating film and fills up into the trench;

    an interlayer insulating film placed by covering the gate electrode;

    a second base layer of a second conductivity type placed on the surface of the first base layer, and is formed more shallowly than a bottom surface of the trench;

    a first main electrode layer of the first conductivity type placed on a surface of the second base layer;

    a first main electrode which passes through the first main electrode layer by applying the interlayer insulating film as a mask, is connected to the second base layer in a bottom surface of a self-aligned contact trench formed in the second base layer, and is connected to the first main electrode layer in the sidewall surface of the self-aligned contact trench;

    a second main electrode layer placed at a back side of the first base layer; and

    a second main electrode placed at the second main electrode layer.

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