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PERFORMANCE ENHANCEMENT IN PMOS AND NMOS TRANSISTORS ON THE BASIS OF SILICON/CARBON MATERIAL

  • US 20100025771A1
  • Filed: 05/28/2009
  • Published: 02/04/2010
  • Est. Priority Date: 07/31/2008
  • Status: Active Grant
First Claim
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1. A method of forming a strained semiconductor material in a first transistor of a first conductivity type and a second transistor of a second conductivity type, the method comprising:

  • forming a stack of layers above a first gate electrode structure of said first transistor and a second gate electrode structure of said second transistor, said first and second gate electrode structures comprising a respective cap layer, said stack of layers comprising a spacer layer and an etch stop layer formed above said spacer layer;

    forming a mask above said second transistor and above said etch stop layer;

    forming a first spacer element at said first gate electrode structure from said spacer layer;

    forming first cavities in drain and source areas of said first transistor using said first spacer element as a mask;

    forming a first strained semiconductor material in said first cavities;

    forming second cavities in drain and source areas of said second transistor using a second spacer element formed from said spacer layer as a mask; and

    forming a second strained semiconductor material in said second cavities, said first and second strained semiconductor materials having a different material composition.

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