Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device

• US 20100025831A1
• Filed: 07/22/2009
• Published: 02/04/2010
• Est. Priority Date: 12/15/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: OGITA, Kaori, SATOU, Yurika, HOSOKI, Kazue, KOMORI, Miho, YAMAZAKI, Shunpei
• Granted Patent: US 8,202,238 B2
• Time in Patent Office: Days
• US Class Current: 257/679
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/0776 the adhering arrangement being a layer of adhesive, so that the record carrier can function as a sticker
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

Abstract

To provide a thin film integrated circuit which is mass produced at low cost, a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming a groove at the boundary between the plurality of thin film integrated circuits; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer; thus, the plurality of thin film integrated circuits are separated from each other.

Claims

1. A capsule comprising:

a coiled antenna formed in a body of the capsule; and

a thin film integrated circuit device comprising;

a flexible substrate;

a base film over the flexible substrate;

a thin film transistor over the base film, the thin film transistor including an island-shaped semiconductor film;

an interlayer insulating film over the thin film transistor, the interlayer insulating film containing an organic material;

a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor; and

a protective film over the wiring, the protective film containing an organic material.

2. A capsule according to claim 1, wherein the thin film transistor has a top gate structure.

3. A capsule according to claim 1, wherein the thin film transistor has a bottom gate structure.

4. A capsule according to claim 1, wherein the island-shaped semiconductor film includes silicon.

5. A capsule according to claim 4, wherein the island-shaped semiconductor film comprises an amorphous semiconductor.

6. A capsule according to claim 4, wherein the island-shaped semiconductor film comprises a crystalline semiconductor.

7. A capsule according to claim 4, wherein the island-shaped semiconductor film comprises a microcrystalline silicon.

8. A plaster comprising:

a gauze; and

a thin film integrated circuit device comprising;

a flexible substrate;

a base film over the flexible substrate;

a thin film transistor over the base film, the thin film transistor including an island-shaped semiconductor film;

an interlayer insulating film over the thin film transistor, the interlayer insulating film containing an organic material;

a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

an antenna over the interlayer insulating film; and

a protective film over the wiring and the antenna, the protective film containing an organic material.

9. A plaster according to claim 8, wherein the thin film transistor has a top gate structure.

10. A plaster according to claim 8, wherein the thin film transistor has a bottom gate structure.

11. A plaster according to claim 8, wherein the island-shaped semiconductor film includes silicon.

12. A plaster according to claim 11, wherein the island-shaped semiconductor film comprises an amorphous semiconductor.

13. A plaster according to claim 11, wherein the island-shaped semiconductor film comprises a crystalline semiconductor.

14. A plaster according to claim 11, wherein the island-shaped semiconductor film comprises a microcrystalline silicon.

15. An ID tag comprising:

a thin film integrated circuit device comprising;

a flexible substrate;

a base film over the flexible substrate;

a thin film transistor over the base film, the thin film transistor including an island-shaped semiconductor film;

an interlayer insulating film over the thin film transistor, the interlayer insulating film containing an organic material;

a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

an antenna over the interlayer insulating film; and

a protective film over the wiring and the antenna, the protective film containing an organic material.

16. An ID tag according to claim 15, wherein the thin film transistor has a top gate structure.

17. An ID tag according to claim 15, wherein the thin film transistor has a bottom gate structure.

18. An ID tag according to claim 15, wherein the island-shaped semiconductor film includes silicon.

19. An ID tag according to claim 18, wherein the island-shaped semiconductor film comprises an amorphous semiconductor.

20. An ID tag according to claim 18, wherein the island-shaped semiconductor film comprises a crystalline semiconductor.

21. An ID tag according to claim 18, wherein the island-shaped semiconductor film comprises a microcrystalline silicon.

22. An ID label comprising;

a label board; and

a thin film integrated circuit device comprising;

a flexible substrate;

a base film over the flexible substrate;

a thin film transistor over the base film, the thin film transistor including an island-shaped semiconductor film;

an interlayer insulating film over the thin film transistor, the interlayer insulating film containing an organic material;

a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

an antenna over the interlayer insulating film; and

a protective film over the wiring and the antenna, the protective film containing an organic material.

23. An ID label according to claim 22, wherein the thin film transistor has a top gate structure.

24. An ID label according to claim 22, wherein the thin film transistor has a bottom gate structure.

25. An ID label according to claim 22, wherein the island-shaped semiconductor film includes silicon.

26. An ID label according to claim 25, wherein the island-shaped semiconductor film comprises an amorphous semiconductor.

27. An ID label according to claim 25, wherein the island-shaped semiconductor film comprises a crystalline semiconductor.

28. An ID label according to claim 25, wherein the island-shaped semiconductor film comprises a microcrystalline silicon.