Thin film transistor, method of manufacturing the same and flat panel display device having the same
First Claim
1. A thin film transistor, comprising:
- a substrate;
an oxide semiconductor layer formed on the substrate and including a channel region, a source region and a drain region, the oxide semiconductor layer including a first layer portion and a second layer portion, the first layer portion having a first thickness and a first carrier concentration, the second layer portion having a second thickness and a second carrier concentration, the second carrier concentration being lower than the first carrier concentration;
a gate electrode insulated from the oxide semiconductor layer by a gate insulating film;
a source electrode coupled to the source region; and
a drain electrode coupled to the drain region.
2 Assignments
0 Petitions
Accused Products
Abstract
Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.
74 Citations
24 Claims
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1. A thin film transistor, comprising:
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a substrate; an oxide semiconductor layer formed on the substrate and including a channel region, a source region and a drain region, the oxide semiconductor layer including a first layer portion and a second layer portion, the first layer portion having a first thickness and a first carrier concentration, the second layer portion having a second thickness and a second carrier concentration, the second carrier concentration being lower than the first carrier concentration; a gate electrode insulated from the oxide semiconductor layer by a gate insulating film; a source electrode coupled to the source region; and a drain electrode coupled to the drain region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a thin film transistor, comprising:
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forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode; forming an oxide semiconductor layer on the gate insulating film, the oxide semiconductor layer including a channel region, a source region, and a drain region, the step of forming the oxide semiconductor layer comprising; depositing a first layer portion having a first thickness and a first carrier concentration; and depositing a second layer portion having a second thickness and a second carrier concentration, the second carrier concentration being lower than the first carrier concentration; forming a source electrode to be coupled to the source region; and forming a drain electrode to be coupled to the drain region. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A flat panel display device, comprising:
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a first substrate comprising; a first conductive line; a second conductive line; a thin film transistors coupled to the first conductive line and the second conductive line; and a first electrode coupled to the thin film transistor, signals supplied to the first electrode being controlled by the thin film transistor; a second substrate including a second electrode; and a liquid crystal layer disposed between the first electrode and second electrode, the thin film transistor of the first substrate comprising; an oxide semiconductor layer formed on the substrate and including a channel region, a source region and a drain region, the oxide semiconductor layer including a first layer portion and a second layer portion, the first layer portion having a first thickness and a first carrier concentration, the second layer portion having a second thickness and a second carrier concentration, the second carrier concentration being lower than the first carrier concentration; a gate electrode insulated from the oxide semiconductor layer by a gate insulating film; a source electrode coupled to the source region; and a drain electrode coupled to the drain region. - View Dependent Claims (16, 17, 18, 19)
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20. A flat panel display device, comprising:
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a first substrate comprising; an organic light emitting device including a first electrode, an organic thin film layer, and a second electrode; and a thin film transistor coupled to the organic light emitting device to control an operation of the organic light emitting device; and a second substrate disposed facing the first substrate, the thin film transistor of the first substrate comprising; an oxide semiconductor layer formed on the substrate and including a channel region, a source region and a drain region, the oxide semiconductor layer including a first layer portion and a second layer portion, the first layer portion having a first thickness and a first carrier concentration, the second layer portion having a second thickness and a second carrier concentration, the second carrier concentration being lower than the first carrier concentration; a gate electrode insulated from the oxide semiconductor layer by a gate insulating film; a source electrode coupled to the source region; and a drain electrode coupled to the drain region. - View Dependent Claims (21, 22, 23, 24)
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Specification