HIGH Q TRANSFORMER DISPOSED AT LEAST PARTLY IN A NON-SEMICONDUCTOR SUBSTRATE
First Claim
1. A structure comprising:
- a non-semiconductor substrate that includes a portion of a transformer; and
an integrated circuit die that is bonded to the non-semiconductor substrate by a plurality of microbumps, wherein the portion of the transformer in the non-semiconductor substrate is connected to at least one of the microbumps.
1 Assignment
0 Petitions
Accused Products
Abstract
An assembly involves an integrated circuit die that is bonded, e.g., flip-chip bonded, to a non-semiconductor substrate by a plurality of low-resistance microbumps. In one novel aspect, at least a part of a novel high-frequency transformer is disposed in the non-semiconductor substrate where the non-semiconductor substrate is the substrate of a ball grid array (BGA) integrated circuit package. At least one of the low-resistance microbumps connects the part of the transformer in the substrate to a circuit in the integrated circuit die. At two gigahertz, the novel transformer has a coupling coefficient k of at least at least 0.4 and also has a transformer quality factor Q of at least ten. The novel transformer structure sees use in coupling differential outputs of a mixer to a single-ended input of a driver amplifier in a transmit chain of an RF transceiver within a cellular telephone.
-
Citations
30 Claims
-
1. A structure comprising:
-
a non-semiconductor substrate that includes a portion of a transformer; and an integrated circuit die that is bonded to the non-semiconductor substrate by a plurality of microbumps, wherein the portion of the transformer in the non-semiconductor substrate is connected to at least one of the microbumps. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A method comprising:
connecting circuitry in an integrated circuit die via a first microbump to at least a portion of a transformer in a non-semiconductor substrate. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
-
22. A method comprising:
providing a microbump that is directly connected to one of an output node of a mixer and an input node of a driver amplifier, wherein the mixer and the driver amplifier are parts of an integrated circuit die, and wherein the microbump is a part of the integrated circuit die. - View Dependent Claims (23, 24)
-
25. An integrated circuit die comprising:
-
a mixer having a first output node and a second output node; a driver amplifier having an input node; and a first microbump that is connected via a conductor to one of the first output node of the mixer, the second output node of the mixer and the input node of the driver amplifier. - View Dependent Claims (26, 27)
-
-
28. A packaged integrated circuit, comprising:
-
an integrated circuit die that includes a circuit and a microbump; and means that is connected to the integrated circuit die by the microbump, wherein the means is for providing at least a part of a transformer such that the part of the transformer is connected to the circuit through the microbump, such that the transformer has a coupling coefficient k at two gigahertz of at least 0.4, such that the transformer has a quality factor Q at two gigahertz of at least ten, and such that the transformer has a self-resonant frequency greater than 4.0 gigahertz. - View Dependent Claims (29, 30)
-
Specification