High Performance Magnetic Tunnel Barriers with Amorphous Materials
First Claim
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1. A method, comprising:
- forming a tunnel barrier selected from the group of tunnel barriers consisting of MgO and Mg—
ZnO;
forming an amorphous ferromagnetic layer by depositing Co and at least one other element on an underlayer, wherein the amorphous layer and the tunnel barrier are formed in proximity to one another to permit spin-polarized current to be passed between the tunnel barrier and the amorphous layer; and
forming an additional magnetic layer, so that the additional magnetic layer, the tunnel barrier, and the amorphous ferromagnetic layer form a magnetic tunnel junction having a tunnel magnetoresistance of greater than 100% at room temperature.
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Abstract
A magnetic tunneling element is constructed from a MgO or Mg—ZnO tunnel barrier and an amorphous magnetic layer in proximity with the tunnel barrier. The amorphous magnetic layer includes Co and at least one additional element selected to make the layer amorphous. Magnetic tunnel junctions formed from the amorphous magnetic layer, the tunnel barrier, and an additional ferromagnetic layer have tunneling magnetoresistance values of up to 200% or more.
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Citations
23 Claims
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1. A method, comprising:
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forming a tunnel barrier selected from the group of tunnel barriers consisting of MgO and Mg—
ZnO;forming an amorphous ferromagnetic layer by depositing Co and at least one other element on an underlayer, wherein the amorphous layer and the tunnel barrier are formed in proximity to one another to permit spin-polarized current to be passed between the tunnel barrier and the amorphous layer; and forming an additional magnetic layer, so that the additional magnetic layer, the tunnel barrier, and the amorphous ferromagnetic layer form a magnetic tunnel junction having a tunnel magnetoresistance of greater than 100% at room temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification