METAL COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND PROCESS OF FORMING THIN FILM

• US 20100028536A1
• Filed: 10/13/2009
• Published: 02/04/2010
• Est. Priority Date: 12/25/2003
• Status: Abandoned Application

• Current Assignee: Adeka Corporation
• Original Assignee: Adeka Corporation
• Inventors: YAMADA, Naoki, SAKURAI, Atsushi
• Application Number:
  US12/578,080
• Publication Number:
  US 20100028536A1
• Time in Patent Office: Days
• US Class Current: 427/255.394
• CPC Class Codes: C07F 7/003 without C-Metal linkages
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/409 of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide

Abstract

A metal compound represented by general formula (I):

wherein R¹, R², R³, and R⁴ each represent an alkyl group having 1 to 4 carbon atoms; A represents an alkanediyl group having 1 to 8 carbon atoms; M represents a lead atom, a titanium atom or a zirconium atom; n represents 2 when M is a lead atom or 4 when M is a titanium atom or zirconium atom. The metal compound has a low melting point and is therefore deliverable in a liquid state, has a high vapor pressure and is therefore easy to vaporize, and, when mixed with other metal compound, undergoes no denaturation due to a chemical reaction. The metal compound is suitable as a material of thin film formation processes involving vaporization of a metal compound, such as CVD.

Claims

1. A metal compound represented by general formula (I):

wherein R¹, R², R³, and R⁴ each represent an alkyl group having 1 to 4 carbon atoms;

A represents an alkanediyl group having 1 to 8 carbon atoms;

M represents a lead atom;

n represents 2.

2. The metal compound according to claim 1, wherein A is a methylene group.

3. A material for film formation comprising the metal compound according to claim 1.

4. A material for thin film formation comprising the metal compound according to claim 2.

5. A process for thin film formation comprising vaporizing the material or thin film formation according to claim 3, introducing the resulting vapor containing the metal compound onto a substrate, and causing the vapor to decompose and/or chemically react to form a metal-containing thin film on the substrate.

6. A process for thin film formation comprising vaporizing the material for thin film formation according to claim 4, introducing the resulting vapor containing the metal compound onto a substrate, and causing the vapor to decompose and/or chemically react to form a metal-containing thin film on the substrate.