SUSCEPTOR, VAPOR PHASE GROWTH APPARATUS, AND METHOD OF MANUFACTURING EPITAXIAL WAFER

• US 20100029066A1
• Filed: 07/30/2009
• Published: 02/04/2010
• Est. Priority Date: 07/31/2008
• Status: Abandoned Application

• Current Assignee: Sumco Corporation
• Original Assignee: Sumco Corporation
• Inventors: MIYASHITA, Junji
• Application Number:
  US12/512,283
• Publication Number:
  US 20100029066A1
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C23C 16/4585 Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• CPC Class Codes: C30B 25/12 Substrate holders or susceptors
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/67386 characterised by the construction of the closed carrier

Abstract

An aspect of the present invention relates to a susceptor comprising a counterbored groove receiving a semiconductor wafer in the course of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of the semiconductor wafer, wherein a lateral wall of the counterbored groove is comprised of at least one flat portion and at least one protruding portion being higher than the flat portion, and a height of the flat portion is equal to or greater than a thickness of the semiconductor wafer.

Claims

1. A susceptor comprising:

a counterbored groove receiving a semiconductor wafer in the course of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of the semiconductor wafer, wherein a lateral wall of the counterbored groove is comprised of at least one flat portion and at least one protruding portion being higher than the flat portion, and a height of the flat portion is equal to or greater than a thickness of the semiconductor wafer.

2. The susceptor according to claim 1, wherein the height of the flat portion is about 1.0 to 2.0 times greater than the thickness of the semiconductor wafer.

3. The susceptor according to claim 1, wherein a difference in height between the highest portion of the protruding portion and an upper surface of the flat portion ranges from about 0.1 to 5 mm.

4. A vapor phase growth apparatus comprising:

the susceptor according to claim 1; and

a reaction chamber housing the susceptor.

5. A method of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of a semiconductor wafer, comprising:

conducting the vapor phase growing in a state where the semiconductor wafer is received in the counterbored groove of the susceptor according to claim 1.

6. The method of manufacturing an epitaxial wafer according to claim 5, wherein the semiconductor wafer is received in the counterbored groove such that, on the surface of the semiconductor wafer, an edge surface in a direction where close {111} planes are present is positioned opposite the protruding portion.