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SINGLE SPACER PROCESS FOR MULTIPLYING PITCH BY A FACTOR GREATER THAN TWO AND RELATED INTERMEDIATE IC STRUCTURES

  • US 20100029081A1
  • Filed: 10/12/2009
  • Published: 02/04/2010
  • Est. Priority Date: 08/30/2006
  • Status: Active Grant
First Claim
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1. A method for semiconductor processing, comprising:

  • providing a tiered elongated mandrel structure having n tiers over a substrate, where n≧

    2, wherein mandrels at tier n are disposed over mandrels at tier n−

    1, wherein a distance between immediately adjacent mandrels at tier n is greater than a distance between adjacent mandrels at tier n−

    1;

    providing a layer of spacer material on the tiered mandrel structure; and

    subjecting the spacer material to an etch to simultaneously define spacers on sidewalls of each of the tiers.

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