SINGLE SPACER PROCESS FOR MULTIPLYING PITCH BY A FACTOR GREATER THAN TWO AND RELATED INTERMEDIATE IC STRUCTURES
First Claim
1. A method for semiconductor processing, comprising:
- providing a tiered elongated mandrel structure having n tiers over a substrate, where n≧
2, wherein mandrels at tier n are disposed over mandrels at tier n−
1, wherein a distance between immediately adjacent mandrels at tier n is greater than a distance between adjacent mandrels at tier n−
1;
providing a layer of spacer material on the tiered mandrel structure; and
subjecting the spacer material to an etch to simultaneously define spacers on sidewalls of each of the tiers.
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Accused Products
Abstract
Single spacer processes for multiplying pitch by a factor greater than two are provided. In one embodiment, n, where n≧2, tiers of stacked mandrels are formed over a substrate, each of the n tiers comprising a plurality of mandrels substantially parallel to one another. Mandrels at tier n are over and parallel to mandrels at tier n−1, and the distance between adjoining mandrels at tier n is greater than the distance between adjoining mandrels at tier n−1. Spacers are simultaneously formed on sidewalls of the mandrels. Exposed portions of the mandrels are etched away and a pattern of lines defined by the spacers is transferred to the substrate.
108 Citations
20 Claims
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1. A method for semiconductor processing, comprising:
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providing a tiered elongated mandrel structure having n tiers over a substrate, where n≧
2, wherein mandrels at tier n are disposed over mandrels at tier n−
1, wherein a distance between immediately adjacent mandrels at tier n is greater than a distance between adjacent mandrels at tier n−
1;providing a layer of spacer material on the tiered mandrel structure; and subjecting the spacer material to an etch to simultaneously define spacers on sidewalls of each of the tiers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for semiconductor processing, comprising:
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providing a tiered mandrel structure over a substrate, the tiered mandrel structure having a first elongated mandrel tier underlying a second elongated mandrel tier, the first elongated mandrel tier having a first width, the second mandrel having a second width smaller than the first width; and simultaneously defining spacers on sidewalls of both the first and the second mandrels. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification