BACK CONTACTED SOLAR CELL
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Abstract
This invention relates to a cost effective method of producing a back contacted silicon solar cell and the cell made by the method, where the method comprises applying a silicon substrate, wafer or thin film, doped on the back side with alternating P-type and N-type conductivity in an interdigitated pattern and optionally a layer of either P- or N-type on the front side of the wafer, depositing one or more surface passivation layers on both sides of the substrate, creating openings in the surface passivation layers on the back side of the substrate, depositing a metallic layer covering the entire back side and which fills the openings in the surface passivation layers, and creating openings in the deposited metallic layer such that electric insulated contacts with the doped regions on the back side of the substrate is obtained.
34 Citations
36 Claims
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1-16. -16. (canceled)
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17. Method for producing a back-contacted solar cell, where the method comprises applying a silicon substrate, wafer or thin film, doped on the back side with alternating P-type and N-type conductivity in an interdigitated pattern and optionally a layer of either P- or N-type on the front side of the wafer,
wherein the method further comprises: -
depositing one or more surface passivation layers on the front side and on the back side of the substrate, the surface passivation layer on the back side comprises an inner amorphous silicon layer or an amorphous silicon carbide layer, the inner layer is followed by a layer of hydrogenated silicon nitride, creating openings in one or more surface passivation layers on the back side of the substrate, depositing a metallic layer covering substantially all of the back side and which fills the openings in the surface passivation layers, creating openings in the deposited metallic layer such that electrically insulated contacts with the doped regions on the back side of the substrate is obtained. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 32, 33, 34, 35, 36)
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27. A solar cell comprising:
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a silicon substrate (1) doped in a layer (3) on the back side with alternating P-type and N-type conductivity in an interdigitated pattern and optionally a layer (2) of either P- or N-type on the front side of the substrate (1), one or more surface passivation layers (4, 5) on the front side of the substrate (1), wherein it further comprises; one or more surface passivation layers (6,7) on the back side of the substrate (1), the inner surface passivation layer (6) is an amorphous silicon layer or an amorphous silicon carbide layer, the inner layer is followed by a layer of hydrogenated silicon nitride, at least one opening (8) in one or more surface passivation layers (6, 7) for each doped region of the layer (3), and a metallic contact (9) filling each opening (8) to obtain electric contact with the underlying doped region in the layer (3) of the substrate (1). - View Dependent Claims (28, 29, 30, 31)
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Specification