METHOD FOR PRODUCING SELF-SUPPORTING MEMBRANES

• US 20100032085A1
• Filed: 09/22/2009
• Published: 02/11/2010
• Est. Priority Date: 03/23/2007
• Status: Abandoned Application

• Current Assignee: Soitec Silicon On Insulator Technologies SA (Soitec S.A.)
• Original Assignee: Soitec Silicon On Insulator Technologies SA (Soitec S.A.)
• Inventors: Aspar, Bernard, Blanchard, Chrystelle Lagahe, Sousbie, Nicolas
• Application Number:
  US12/564,112
• Publication Number:
  US 20100032085A1
• Time in Patent Office: Days
• US Class Current: 156/247
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

The disclosure relates to methods and systems for separating a membrane from a substrate. In accordance with a preferred embodiment, the method includes applying at least one member to the membrane by way of an adhesive, wherein the adhesive is applied to substantially less than the entirety of the surface of said membrane which is not facing the substrate. The method further includes separating at least a part of the membrane from the substrate by applying a force to the at least one member.

Claims

1. A method for separating a membrane from a substrate, comprising:

a) applying at least one member to the membrane by way of an adhesive, wherein the adhesive is applied to substantially less than the entirety of the surface of said membrane which is not facing the substrate;

b) separating at least a part of the membrane from the substrate by applying a force to the at least one member.

2. The method of claim 1, wherein the membrane is initially bonded by molecular adhesion to the substrate.

3. The method of claim 1, wherein the membrane is initially bonded via a bonding layer to the substrate.

4. The method of claim 3, wherein the substrate includes a weakened zone therein.

5. The method of claims 1, wherein the membrane includes material selected from the group consisting of a semiconductor material, a piezoelectric material and a ferroelectric material.

6. The method of claim 1, wherein the membrane includes material selected from the group consisting of weakly doped silicon, strongly doped silicon, AsGa, Ge, SiC, GaN, InP, LiNbO₃ and LiTaO₃.

7. The method of claim 1, wherein the membrane is a mono-layered structure.

8. The method of claim 1, wherein the membrane is a multi-layered structure.

9. The method of claim 1, wherein the membrane includes a processed layer.

10. The method of claim 9, wherein the processed layer includes at least one of a hole, a chip, a circuit and a microsystem.

11. The method of claim 1, wherein the separation step includes a lateral attack to the interface between the membrane and substrate to facilitate separation.

12. The method of claim 11, wherein the lateral attack includes applying a chemical to the interface.

13. The method of claim 1, wherein the membrane has a thickness greater than three microns.

14. The method of claim 1, wherein the membrane is circular.

15. The method of claim 1, wherein the ratio of the entirety of the area of the surface of the membrane not facing the substrate to the surface area to which the adhesive is attached is between about 2 and about 50.

16. The method of claim 1, wherein the ratio of the entirety of the area of the surface of the membrane not facing the substrate to the surface area to which the adhesive is attached is between about 2 and about 100.

17. The method of claim 1, wherein the ratio of the entirety of the area of the surface of the membrane not facing the substrate to the surface area to which the adhesive is attached is between about 10 and about 50.

18. The method of claim 1, wherein the ratio of the entirety of the area of the surface of the membrane not facing the substrate to the surface area to which the adhesive is attached is between about 10 and about 20.

19. The method of claim 1, wherein the membrane is adapted and configured to be self-supporting after the separating step.

20. The method of claim 1, further comprising transferring the membrane onto a support after the separating step.

21. The method according to claim 1, wherein the membrane includes a weakened zone formed therein.

22. The method of claim 21, wherein the separating step takes place at least in part along the weakened zone.

23. The method of claim 21, wherein the weakened zone is produced by ionic or atomic implantation.

24. The method of claim 23, wherein the weakened zone is produced before bonding the membrane to the substrate.

25. The method of claim 1, wherein the interface between the membrane and the substrate has a controlled bonding energy to facilitate the separating step.

26. The method of claim 1, wherein the interface between the substrate and the membrane includes a material that is selected to facilitate the separating step.