Multi-function light sensor

• US 20100032569A1
• Filed: 07/31/2009
• Published: 02/11/2010
• Est. Priority Date: 08/08/2008
• Status: Active Grant

• Current Assignee: LAPIS Semiconductor Co., Ltd. (ROHM Co., Ltd.)
• Original Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Inventors: Kita, Yukihiro
• Granted Patent: US 8,071,946 B2
• Time in Patent Office: Days
• US Class Current: 250/338.400
• CPC Class Codes: G01J 1/0209 Monolithic
• CPC Class Codes: G01J 1/4228 arrangements with two or more detectors, e.g. for sensitivity compensation
• CPC Class Codes: G01J 1/429 applied to measurement of ultraviolet light using counting tubes G01T
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14647 Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
• CPC Class Codes: H01L 27/14687 Wafer level processing

Abstract

The light sensor according to an exemplary embodiment of the present invention is a multi-function light sensor that is equipped at low cost with both an ultraviolet light sensor and a visible light sensor and suppresses leak current between adjacent elements on the same substrate. The light sensor is equipped with a SOI substrate, formed from a silicon oxide insulating film and a silicon semiconductor layer made up from single crystal silicon, on a silicon substrate. Photodiodes PD1 and PD2 are formed on the silicon substrate, and a photodiode UV-PD, and main portions (source, drain and channel regions) of a MOSFET configuring a control circuit, are formed in the silicon semiconductor layer on the insulating film.

Claims

1. A light sensor comprising:

a first light receiving element having sensitivity to ultraviolet light, the first light receiving element being formed on a silicon semiconductor layer of an SOI substrate provided with a silicon substrate, an insulating film formed on the silicon substrate, and the silicon semiconductor layer formed on the insulating film;

a second light receiving element having sensitivity to visible light or infrared light, the second light receiving element being formed on the silicon substrate along the surface direction of a main face of the SOI substrate in a second region that is adjacent to a first region where the first light receiving element is formed; and

a third light receiving element having sensitivity to visible light or infrared light, the third light receiving element being formed on the silicon substrate along the surface direction in a third region that is adjacent to the first region formed with the first light receiving element and that is separated by a predetermined separation distance from the second region.

2. The light sensor of claim 1, wherein the third light receiving element has sensitivity to a different wavelength of visible light or infrared light than that of the second light receiving element.

3. The light sensor of claim 1, further comprising a control circuit, for controlling each of the first light receiving element, the second light receiving element and the third light receiving element that are formed on the silicon semiconductor layer.

4. The light sensor of claim 1, wherein the first region, the second region and the third region are disposed along the surface direction in a single dimensional shape in the sequence second region, first region, third region.

5. The light sensor of claim 1, wherein the first region, the second region and the third region are disposed along the surface direction such that an array direction of the first region and the second region intersects with an array direction of the first region and the third region.

6. The light sensor of claim 5, wherein the control circuit is disposed along the surface direction at a position where a direction parallel to the array direction of the first region and the third region and passing the second region, intersects with a direction parallel to the array direction of the first region and the second region and passing the third region.

7. The light sensor of claim 6, wherein the control circuit comprises an amplifier circuit, and the amplifier circuit is disposed at a position in the control circuit that is in the vicinity of the second region and the third region.

8. The light sensor of claim 1, wherein the second region and the third region are disposed separated by a separation distance such that the leak current between the second light receiving element and the leak current is 1×

10<sup>−

9</sup> A or less.

9. The light sensor of claim 1, wherein the second region is separated from the third region along the surface direction by 120 μ

m or greater.

10. The light sensor of claim 1, wherein each of the first light receiving element, the second light receiving element, and the third light receiving element are pn junction photodiodes with a p-type diffusion region and an n-type diffusion region arrayed along the surface direction.