III-Nitride Compound Semiconductor Light Emitting Device
First Claim
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1. A III-nitride compound semiconductor light emitting device comprising;
- an n-type nitride compound semiconductor layer;
an active layer grown over the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole;
a p-type nitride compound semiconductor layer grown over the active layer; and
a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer.
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Abstract
The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer.
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17 Claims
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1. A III-nitride compound semiconductor light emitting device comprising;
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an n-type nitride compound semiconductor layer; an active layer grown over the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole; a p-type nitride compound semiconductor layer grown over the active layer; and a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A III-nitride compound semiconductor light emitting device comprising;
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an n-type nitride compound semiconductor layer; an active layer grown over the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole; a p-type nitride compound semiconductor layer grown over the active layer; a nitride compound semiconductor layer with a pinhole structure grown over the p-type nitride compound semiconductor layer; a masking film and a plurality of nitride compound semiconductor layers grown after the growth of the nitride compound semiconductor layer with the pinhole structure. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification