LED WITH CURRENT CONFINEMENT STRUCTURE AND SURFACE ROUGHENING
First Claim
1. In a light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of said diode and a reflective layer adjacent the light emitting region of said diode;
- the improvement comprising;
an opening in said reflective layer beneath said top ohmic contact that defines a non-contact area between said reflective layer and said light emitting region of said diode to encourage current flow to take place other than at said non-contact area to in turn decrease the number of light emitting recombinations beneath said ohmic contact and increase the number of light emitting recombinations in the areas not beneath said ohmic contact.
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Accused Products
Abstract
An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.
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Citations
19 Claims
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1. In a light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of said diode and a reflective layer adjacent the light emitting region of said diode;
- the improvement comprising;
an opening in said reflective layer beneath said top ohmic contact that defines a non-contact area between said reflective layer and said light emitting region of said diode to encourage current flow to take place other than at said non-contact area to in turn decrease the number of light emitting recombinations beneath said ohmic contact and increase the number of light emitting recombinations in the areas not beneath said ohmic contact. - View Dependent Claims (2, 4, 5, 6, 7, 8, 9)
- the improvement comprising;
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3. A light emitting diode according to claim 3 wherein said reflective layer is positioned between said substrate and said light emitting region.
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10. In a light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of said diode and a reflective layer adjacent the light emitting region of said diode;
- the improvement comprising;
a passivated portion of said light emitting region beneath said top ohmic contact that defines a less conductive area between said reflective layer and said light emitting region of said diode to encourage current flow to take place other than at said passivated portion to in turn decrease the number of light emitting recombinations beneath said ohmic contact and increase the number of light emitting recombinations not beneath said top ohmic contact. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
- the improvement comprising;
Specification