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SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20100032747A1
  • Filed: 07/21/2009
  • Published: 02/11/2010
  • Est. Priority Date: 08/08/2008
  • Status: Abandoned Application
First Claim
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1. A semiconductor memory device comprising:

  • a plurality of memory cell transistors each comprising a gate electrode section including a charge accumulation layer formed on a semiconductor substrate via a gate insulating film, a first insulating film formed on the charge accumulation layer using a material with a higher dielectric constant than the gate insulating film, and a control gate formed on the first insulating film, and an impurity diffusion layer as a source or a drain;

    a plurality of barrier films formed on a side surface of the gate electrode section to cover a side surface of at least the first insulating film and formed between the first insulating film and the control gate; and

    a plurality of second insulating films formed on the semiconductor substrate and each formed between the gate electrode sections of adjacent ones of the plurality of memory cell transistors;

    wherein during annealing of the plurality of memory cell transistors, the plurality of barrier films prevent atoms comprising the second insulating film and the control gate from diffusing to the first insulating film.

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