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Field effect transistor and electric circuit

  • US 20100033213A1
  • Filed: 10/04/2007
  • Published: 02/11/2010
  • Est. Priority Date: 10/06/2006
  • Status: Active Grant
First Claim
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1. A field effect transistor comprising;

  • at least one source electrode layer and a plurality of drain electrode layers arranged in the same plane;

    a semiconductor layer overlying the at least one source electrode layer and the plurality of drain electrode layers;

    an insulator layer overlying the semiconductor layer; and

    a gate electrode layer on the insulator layer characterized in that the gate electrode layer, wherein as seen perpendicular to the plane of the at least one source electrode layer and the plurality of drain electrode layers the gate electrode layers is juxtaposed with only a portion of the source electrode layer and only a portion of the plurality of drain electrode layers such that only the portion of the source electrode layer and portion of the plurality of the drain electrode layers that are juxtaposed with the gate electrode layer are electrically operative as a transistor.

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