COMPENSATING FOR COUPLING DURING READ OPERATIONS IN NON-VOLATILE STORAGE
First Claim
1. A method for operating non-volatile storage, comprising:
- reading at least one bit line-adjacent storage element of a selected storage element to ascertain a data state of the at least one bit line-adjacent storage element, the at least one bit line-adjacent storage element and the selected storage element are associated with respective bit lines; and
reading the selected storage element to ascertain a data state of the selected storage element, including applying different control gate read voltages, one at a time, to the selected storage element while setting voltages of the respective bit line of the at least one bit line-adjacent storage element based on its ascertained data state and the control gate read voltages.
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Accused Products
Abstract
Capacitive coupling from storage elements on adjacent bit lines is compensated by adjusting voltages applied to the adjacent bit lines. An initial rough read is performed to ascertain the data states of the bit line-adjacent storage elements, and during a subsequent fine read, bit line voltages are set based on the ascertained states and the current control gate read voltage which is applied to a selected word line. When the current control gate read voltage corresponds to a lower data state than the ascertained state of an adjacent storage element, a compensating bit line voltage is used. Compensation of coupling from a storage element on an adjacent word line can also be provided by applying different read pass voltages to the adjacent word line, and obtaining read data using a particular read pass voltage which is identified based on a data state of the word line-adjacent storage element.
118 Citations
19 Claims
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1. A method for operating non-volatile storage, comprising:
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reading at least one bit line-adjacent storage element of a selected storage element to ascertain a data state of the at least one bit line-adjacent storage element, the at least one bit line-adjacent storage element and the selected storage element are associated with respective bit lines; and reading the selected storage element to ascertain a data state of the selected storage element, including applying different control gate read voltages, one at a time, to the selected storage element while setting voltages of the respective bit line of the at least one bit line-adjacent storage element based on its ascertained data state and the control gate read voltages. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for operating non-volatile storage, comprising:
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as part of a first step of a multi-step read operation, reading a plurality of storage elements to ascertain their data states, the plurality of storage elements are associated with a plurality of adjacent bit lines; and as part of a second step of the multi-step read operation, again reading the plurality of storage elements to again ascertain their data states, including applying different control gate read voltages, one after another, to the plurality of storage elements, and setting voltages on the plurality of bit lines based on the ascertained data states of the first step and based on the control gate read voltages. - View Dependent Claims (11, 12, 13)
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14. A method for operating non-volatile storage, comprising:
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reading storage elements on an adjacent word line of a selected word line to ascertain their data states, including reading a word-line adjacent storage element of a selected storage element, the selected storage element is associated with the selected word line; reading at least one bit line-adjacent storage element of the selected storage element; and reading the selected storage element to ascertain its data state, while compensating for coupling associated with the word line-adjacent storage element, responsive to the reading of the word line-adjacent storage element, and while compensating for coupling associated with the at least one bit line-adjacent storage element, responsive to the reading of the at least one bit line-adjacent storage element. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification