NOVEL LANTHANIDE BETA-DIKETONATE PRECURSORS FOR LANTHANIDE THIN FILM DEPOSITION
First Claim
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1. A method of forming a lanthanide containing layer on a substrate, comprising:
- a) providing a reactor and at least one substrate disposed therein;
b) introducing a precursor-containing vapor into the reactor, wherein the precursor-containing vapor comprises at least one precursor of the general formula (I);
wherein;
Ln is at least one member selected from the lanthanide group of elements;
each L is independently a neutral ligand;
0≦
z≦
4, where z represents a number of beta-diketonate groups;
0≦
x≦
4, where x represents a number of neutral ligands;
each R is independently selected from the group consisting of;
hydrogen and a C1-C5 aliphatic group, or aliphatic moiety;
c) maintaining the reactor at a temperature of at least about 100°
C.; and
d) contacting the precursor-containing vapor with at least part of the substrate, and forming a lanthanide containing layer on the substrate through a vapor deposition process.
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Abstract
Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide thin film layer is deposited onto the substrate.
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Citations
17 Claims
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1. A method of forming a lanthanide containing layer on a substrate, comprising:
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a) providing a reactor and at least one substrate disposed therein; b) introducing a precursor-containing vapor into the reactor, wherein the precursor-containing vapor comprises at least one precursor of the general formula (I); wherein; Ln is at least one member selected from the lanthanide group of elements; each L is independently a neutral ligand; 0≦
z≦
4, where z represents a number of beta-diketonate groups;0≦
x≦
4, where x represents a number of neutral ligands;each R is independently selected from the group consisting of;
hydrogen and a C1-C5 aliphatic group, or aliphatic moiety;c) maintaining the reactor at a temperature of at least about 100°
C.; andd) contacting the precursor-containing vapor with at least part of the substrate, and forming a lanthanide containing layer on the substrate through a vapor deposition process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
wherein; L is a neutral ligand comprising at least one member selected from the group consisting of;
tetrahydrofuran (THF);
diglyme;
triglyme;
tetraglyme;
dimethyl ether (DME); and
combinations thereof.
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5. The method of claim 1, wherein the precursor has a melting point of less than about 70°
- C.
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6. The method of claim 5, wherein the precursor is a liquid at room temperature.
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7. The method of claim 1, further comprising introducing a second precursor-containing vapor into the reactor, wherein the second precursor-containing vapor comprises a precursor containing at least one of the following elements:
- Ti, Ta, Bi, Hf, Zr, Pb, Nb, Mg, Al, Sr, Y, Ba, Ca, a lanthanide, and combinations thereof.
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8. The method of claim 1, further comprising introducing at least one oxidizing gas into the reactor, wherein the oxidizing gas comprises at least one member selected from the group consisting of:
- O2;
O3;
H2O;
H2O2; and
mixtures thereof.
- O2;
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9. The method of claim 1, wherein the vapor deposition process is a chemical vapor deposition (CVD) type process.
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10. The method of claim 1, wherein the vapor deposition process is an atomic layer deposition (ALD) type process, comprising a plurality of deposition cycles.
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11. The method of claim 1, wherein the precursor comprises at least one member selected from the group consisting of:
- Y(tmod)3,tetraglyme;
Er(tmod)3,tetraglyme;
Tb(tmod)3,tetraglyme; and
La(tmod)3,tetraglyme.
- Y(tmod)3,tetraglyme;
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12. A substrate containing a lanthanide layer comprising the product of the method of claim 1.
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13. A composition comprising at least one precursor of the general formula (I):
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wherein; Ln is at least one member selected from the lanthanide group of elements; each L is independently a neutral ligand; 0≦
z≦
4, where z represents a number of beta-diketonate groups;0≦
x≦
4, where x represents a number of neutral ligands; andeach R is independently selected from the group consisting of;
hydrogen and a C1-C5 aliphatic group, or aliphatic moiety.- View Dependent Claims (14, 15, 16, 17)
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Specification
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Current AssigneeAmerican Air Liquide Incorporated (L'Air Liquide SA)
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Original AssigneeAmerican Air Liquide Incorporated (L'Air Liquide SA)
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InventorsDUSSARRAT, Christian, Omarjee, Vincent M.
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Application NumberUS12/536,804Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current423/263CPC Class CodesC07F 5/003 without C-Metal linkagesC23C 16/18 from metallo-organic compounds
