INTERNAL GEAR PUMP

• US 20100035082A1
• Filed: 01/06/2006
• Published: 02/11/2010
• Est. Priority Date: 01/08/2005
• Status: Active Grant

• Current Assignee: Kanagawa Institute of Industrial Science and Technology, Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Kanagawa Academy of Science and Technology, Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Hitosugi, Taro, Hasegawa, Tetsuya, Furubayashi, Yutaka, Kasai, Junpei, Hirose, Yasushi, Moriyama, Miki
• Granted Patent: US 7,968,216 B2
• Time in Patent Office: Days
• US Class Current: 428/697
• CPC Class Codes: C23C 14/021 Cleaning or etching treatments
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/28 by wave energy or particle radiation C23C14/32 - C23C14/48 take precedence
• CPC Class Codes: C30B 23/025 characterised by the substrate
• CPC Class Codes: C30B 23/066 Heating of the material to be evaporated
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/16 Oxides

Abstract

There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an Al_xGa_yIn_zN layer (wherein 0≦x≦1, 0≦y≦1, and 0≦z≦1) and an oxide material layer composed of a metal oxide and formed on the Al_xGa_yIn_zN layer. The metal oxide may be TiO₂. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

Claims

1. A functional device, comprising:

an Al_xGa_yIn_zN layer (wherein 0≦

x≦

1, 0≦

y≦

1, and 0≦

z≦

1); and

an oxide material layer formed on the Al_xGa_yIn_zN layer, the oxide material being composed of a metal oxide,

wherein the metal oxide is TiO₂.

2. The functional device according to claim 1, wherein the metal oxide is doped with at least one element selected from the group consisting of Nb, Ta, Mo, As, Sb, Al, and W.

3. The functional device according to claim 1, wherein the metal oxide is doped with at least one selected from the group consisting of Co, Fe, Cr, Sn, Ni, Mn, and V.

4. The functional device according to claim 1, wherein the oxide material layer is a single-phase film.

5. The functional device according to claim 1, wherein the oxide material layer is an epitaxial film.

6. The functional device according to claim 1, wherein the functional device is a transparent electrode.

7. The functional device according to claim 1, wherein the functional device is a light-emitting element.

8. The functional device according to claim 1, wherein the functional device is a high-frequency device.

9. The functional device according to claim 3, wherein the functional device functions as a photomagnetic device.

10. The functional device according to claim 3, wherein the functional device functions as an isolator.

11. A method for forming an oxide material layer composed of a metal oxide on an Al_xGa_yIn_zN (wherein 0≦

x≦

1, 0≦

y≦

1, and 0≦

z≦

1) layer by a pulsed laser deposition method, wherein

the metal oxide is TiO₂.

12. The method for forming an oxide material layer according to claim 11, wherein

the metal oxide is doped with tantalum, and

the substrate temperature at the deposition is in the range of 320°

C. to 550°

C.

13. The method for forming an oxide material layer according to claim 11, wherein

the metal oxide is doped with tantalum, and

the substrate temperature at the deposition is in the range of 320°

C. to 450°

C.

14. The method for forming an oxide material layer according to claim 11, wherein

the metal oxide is doped with tantalum, and

the substrate temperature at the deposition is in the range of 320°

C. to 400°

C.

15. The method for forming an oxide material layer according to claim 11, further comprising exposing gallium at the substrate surface before the deposition.

16. The method for forming an oxide material layer according to claim 11, further comprising treating the substrate surface with an acid before the deposition.

17. The method for forming an oxide material layer according to claim 11, wherein

the metal oxide is doped with niobium, and

the substrate temperature at the deposition is in the range of 350°

C. to 500°

C.

18. A functional device, comprising:

an Al_xGa_yIn_zN layer (wherein 0≦

x≦

1, 0≦

y≦

1, and 0≦

z≦

1); and

an oxide material layer formed on the Al_xGa_yIn_zN layer, the oxide material layer being composed of a metal oxide,

wherein the metal oxide is Ti_1-α

Nb_α

O₂ (wherein 0.01≦

α

≦

0.15).

19. A functional device, comprising:

an Al_xGa_yIn_zN layer (wherein 0≦

x≦

1, 0≦

y≦

1, and 0≦

z≦

1); and

an oxide material layer formed on the Al_xGa_yIn_zN layer, the oxide material layer being composed of a metal oxide,

wherein the metal oxide is SnO₂.

20. The functional device according to claim 19, wherein the metal oxide is doped with at least one element selected from the group consisting of P, As, Sb, S, Se, Te, Al, Ga, and In.

21. The functional device according to claim 19, wherein the metal oxide is doped with at least one element selected from the group consisting of Co, Fe, Cr, Mn, V, and Ni.

22. A method for forming an oxide material layer composed of a metal oxide on an Al_xGa_yIn_zN layer (wherein 0≦

x≦

1, 0≦

y≦

1, and 0≦

z≦

1) by a pulsed laser deposition method, wherein

the metal oxide is SnO₂.