PATTERN PREDICTING METHOD, RECORDING MEDIA AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

• US 20100035168A1
• Filed: 08/07/2009
• Published: 02/11/2010
• Est. Priority Date: 08/08/2008
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: NAKAJIMA, Fumiharu, Kodama, Chikaaki, Mashita, Hiromitsu, Kotani, Toshiya
• Application Number:
  US12/537,934
• Publication Number:
  US 20100035168A1
• Time in Patent Office: Days
• US Class Current: 430/30
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/68 Preparation processes not covered by groups G03F1/20 - G03F1/50
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

A pattern predicting method according to one embodiment includes obtaining shape data of a target pattern from shape data of a second pattern to be formed by transferring a first pattern at predetermined process conditions by using a first neutral network, the target pattern being to be a target of the second pattern when the first pattern is transferred at the predetermined process conditions, so as to keep the transferred patterns within an acceptable range, the transferred patterns being formed by transferring the first pattern at process conditions changed from the predetermined process conditions and obtaining shape data of a new first pattern for forming the target pattern at the predetermined process conditions by using a second neutral network.

Claims

1. A pattern predicting method, comprising:

obtaining shape data of a target pattern from shape data of a second pattern to be formed by transferring a first pattern at predetermined process conditions by using a first neutral network, the target pattern being to be a target of the second pattern when the first pattern is transferred at the predetermined process conditions, so as to keep the transferred patterns within an acceptable range, the transferred patterns being formed by transferring the first pattern at process conditions changed from the predetermined process conditions; and

obtaining shape data of a new first pattern for forming the target pattern at the predetermined process conditions by using a second neutral network.

2. The pattern predicting method according to claim 1, wherein:

the first pattern is a mask pattern; and

the second pattern is a wafer pattern or a resist pattern.

3. The pattern predicting method according to claim 2, wherein:

the process conditions include a focus value and a dose.

4. The pattern predicting method according to claim 1, wherein:

the shape data of the target pattern being to be a target of the second pattern are obtained so that process tolerance that the shape data of the second pattern are kept within the acceptable range even if the process conditions fluctuate becomes almost the largest value.

5. The pattern predicting method according to claim 3, wherein:

the shape data of almost a center of an ellipse inscribed in a region of the acceptable range of the shape data are obtained as the shape data of the target pattern being to be a target of the second pattern, the ellipse being inscribed in the region of the acceptable range when a relationship between the focus value and the dose, and the shape data of the second pattern and the shape data of the third pattern is shown by a three dimensional graph.

6. The pattern predicting method according to claim 3, wherein:

the ellipse has a long axis selected from either the focus value or the dose that is lager than another in an amount of change.

7. The pattern predicting method according to claim 1, wherein:

the first and second patterns are formed by that a plurality of line patterns are arranged in the width direction of the line pattern, and

the shape data include a width of the line pattern or a distance between the line patterns.

8. The pattern predicting method according to claim 7, wherein:

the plural line patterns include selection gate lines and word lines of a semiconductor device.

9. The pattern predicting method according to claim 1, wherein:

further, obtaining design data of the first pattern from the new first pattern by using a third neutral network.

10. The pattern predicting method according to claim 1, wherein:

the method further comprises;

a first learning step of inputting the shape data of the plural second patterns formed by transferring the plural first patterns having different shapes at predetermined process conditions to an input layer of the first neutral network, obtaining the shape data of the plural target patterns based on the shape data of the plural second patterns and shape data of plural third patterns formed by transferring the plural first patterns at process conditions having at least one process condition different from the predetermined process conditions, and inputting the shape data of the plural target patterns to an output layer of the first neutral network so as to allow the first neutral network to learn, and;

a second learning step of inputting the shape data of the plural second patterns inputted to the input layer of the first neutral network in the first learning step to an input layer of the second neutral network, and inputting the shape data of the plural first patterns having different shapes in the first learning step to the output layer of the second neutral network so as to allow the second neutral network to learn.

11. The pattern predicting method according to claim 10, wherein:

the first pattern is a mask pattern; and

the second pattern is a wafer pattern or a resist pattern.

12. The pattern predicting method according to claim 11, wherein:

the process conditions include a focus value and a dose.

13. The pattern predicting method according to claim 1, wherein:

the shape data of the target pattern being to be a target of the second pattern are obtained so that process tolerance that the shape data of the second pattern are kept within the acceptable range even if the process conditions fluctuate becomes almost the largest value.

19. A method of fabricating a semiconductor device, comprising:

obtaining the data of the new first pattern by using the pattern predicting method according to claim 1; and

forming a device pattern on a wafer by using a mask having the new first pattern obtained.

20. A method of fabricating a semiconductor device according to claim 19, wherein:

the device further comprises a data set generation part for;

generating the shape data of the plural second patterns formed by transferring the plural first patterns having different shapes at predetermined process conditions, and the shape data of the plural target patterns based on the shape data of the plural second patterns and shape data of plural third patterns formed by transferring the plural first patterns at process conditions having at least one process condition different from the predetermined process conditions,

inputting the shape data of the plural second patterns to the input layer of the first neutral network,

inputting the shape data of the plural target patterns to the output layer of the first neutral network,

inputting the shape data of the plural second patterns to the input layer of the second neutral network, and

inputting the shape data of the plural first patterns to the output layer of the second neutral network.

14. A computer-readable recording media comprising:

a computer program recorded thereon, wherein the computer program is configured to instruct a computer to execute;

obtaining shape data of a target pattern from shape data of a second pattern to be formed by transferring a first pattern at predetermined process conditions by using a first neutral network, the target pattern being to be a target of the second pattern when the first pattern is transferred at the predetermined process conditions, so as to keep the transferred patterns within an acceptable range, the transferred patterns being formed by transferring the first pattern at process conditions changed from the predetermined process conditions; and

obtaining shape data of a new first pattern for forming the target pattern at the predetermined process conditions.

15. The computer-readable recording media according to claim 14, wherein:

the first pattern is a mask pattern; and

the second pattern is a wafer pattern or a resist pattern.

16. The computer-readable recording media according to claim 14, wherein:

the process conditions include a focus value and a dose.

17. The computer-readable recording media according to claim 14, wherein:

the shape data of the target pattern being to be a target of the second pattern are obtained so that process tolerance that the shape data of the second pattern are kept within the acceptable range even if the process conditions fluctuate becomes almost the largest value.

18. The computer-readable recording media according to claim 14, wherein:

the shape data of almost a center of an ellipse inscribed in a region of the acceptable range of the shape data are obtained as the shape data of the target pattern being to be a target of the second pattern, the ellipse being inscribed in the region of the acceptable range when a relationship between the focus value and the dose, and the shape data of the second pattern and the shape data of the third pattern is shown by a three dimensional graph.