METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device comprising:
- forming a gate electrode layer over a substrate;
forming a gate insulating film over the gate electrode layer;
forming an oxide semiconductor film containing indium, gallium, and zinc over the gate insulating film;
forming a channel protective layer over a channel formation region of the semiconductor film;
forming a film having n-type conductivity over the semiconductor film;
forming a conductive film over the film having n-type conductivity;
forming a resist mask over the conductive film; and
etching the conductive film, the film having n-type conductivity, and the semiconductor film using the resist mask to form source and drain electrode layers, a buffer layer, and a semiconductor layer.
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Accused Products
Abstract
To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
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Citations
20 Claims
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1. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode layer over a substrate; forming a gate insulating film over the gate electrode layer; forming an oxide semiconductor film containing indium, gallium, and zinc over the gate insulating film; forming a channel protective layer over a channel formation region of the semiconductor film; forming a film having n-type conductivity over the semiconductor film; forming a conductive film over the film having n-type conductivity; forming a resist mask over the conductive film; and etching the conductive film, the film having n-type conductivity, and the semiconductor film using the resist mask to form source and drain electrode layers, a buffer layer, and a semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode layer having a light-shielding property over a substrate having a light-transmitting property; forming a gate insulating film having a light-transmitting property over the gate electrode layer; forming an oxide semiconductor film containing indium, gallium, and zinc over the gate insulating film; forming an insulating film having a light-transmitting property over the semiconductor film; forming a photoresist film over the insulating film; exposing the photoresist film to light through the substrate using the gate electrode layer as a photomask to form a resist mask; and forming a channel protective layer using the resist mask. - View Dependent Claims (12, 13, 14, 15)
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16. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode layer having a light-shielding property over a substrate having a light-transmitting property; forming a gate insulating film having a light-transmitting property over the gate electrode layer; forming an oxide semiconductor film containing indium, gallium, and zinc over the gate insulating film; forming an insulating film having a light-transmitting property over the semiconductor film; forming a photoresist film over the insulating film; exposing the photoresist film to light through the substrate using the gate electrode layer as a photomask to form a resist mask which overlaps with the gate electrode layer; and forming a channel protective layer by etching the insulating film using the resist mask. - View Dependent Claims (17, 18, 19, 20)
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Specification