THIN FILM FIELD EFFECT TRANSISTOR

• US 20100038641A1
• Filed: 08/11/2009
• Published: 02/18/2010
• Est. Priority Date: 08/14/2008
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Group)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: IMAI, Shinji
• Granted Patent: US 8,203,143 B2
• Time in Patent Office: Days
• US Class Current: 257/57
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A thin film field effect transistor has at least a gate electrode 2, a gate insulating layer 3, an active layer 4, a source electrode 5-1 and a drain electrode 5-2 on a substrate 1. The active layer includes an amorphous oxide semiconductor including at least In and Zn, a first interface layer 61 is disposed between the gate insulating layer and the active layer such that it is adjacent to at least the active layer, and a second interface layer is disposed on the opposite side of the active layer with respect to the first interface layer such that it is adjacent to the active layer. A content of Ga or Al in the amorphous oxide semiconductor of each of the first interface layer and the second interface layer is higher than a content of Ga or Al in the amorphous oxide semiconductor of the active layer.

Claims

1. A thin film field effect transistor comprising:

at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on a substrate, wherein

the active layer comprises an amorphous oxide semiconductor containing at least In and Zn;

a first interface layer comprising an amorphous oxide semiconductor containing Ga or Al is disposed between the gate insulating layer and the active layer such that it is adjacent to at least the active layer, a content of Ga or Al in the amorphous oxide semiconductor of the first interface layer being higher than a content of Ga or Al in the amorphous oxide semiconductor of the active layer; and

a second interface layer comprising an amorphous oxide semiconductor containing Ga or Al is disposed on the opposite side of the active layer with respect to the first interface layer such that it is adjacent to the active layer, a content of Ga or Al in the amorphous oxide semiconductor of the second interface layer being higher than the content of Ga or Al in the amorphous oxide semiconductor of the active layer.

2. The thin film field effect transistor according to claim 1, wherein the amorphous oxide semiconductor of the active layer comprises In at a content of 70% or more and Zn at a content of 5% or more with respect to all metal components in the amorphous oxide semiconductor of the active layer.

3. The thin film field effect transistor according to claim 1, wherein the content of Ga or Al in the amorphous oxide semiconductor of the first interface layer is at least twice the content of Ga or Al in the amorphous oxide semiconductor of the active layer, and the content of Ga or Al in the amorphous oxide semiconductor of the second interface layer is at least twice the content of Ga or Al in the amorphous oxide semiconductor of the active layer.

4. The thin film field effect transistor according to claim 1, wherein the amorphous oxide semiconductor of the active layer contains In at a content of 70% or more and Zn at a content of 5% or more with respect to all the metal components in the amorphous oxide semiconductor of the active layer, the content of Ga or Al in the amorphous oxide semiconductor of the first interface layer is at least twice the content of Ga or Al in the amorphous oxide semiconductor of the active layer, and the content of Ga or Al in the amorphous oxide semiconductor of the second interface layer is at least twice the content of Ga or Al in the amorphous oxide semiconductor of the active layer.

5. The thin film field effect transistor according to claim 1, wherein a thickness of the active layer is 1.0 nm or more and less than 20 nm.

6. The thin film field effect transistor according to claim 5, wherein the thickness of the active layer is 2.5 nm or more and less than 15 nm.

7. The thin film field effect transistor according to claim 5, wherein the thickness of the active layer is 1.0 nm or more and less than 2.0 nm.

8. The thin film field effect transistor according to claim 1, wherein a plurality of the active layers are provided, and an intermediate interface layer is disposed between the active layers which are adjacent to each other, wherein the intermediate interface layer comprises an amorphous oxide semiconductor containing Ga or Al, a content of Ga or Al in the amorphous oxide semiconductor of the intermediate layer being higher than the content of Ga or Al in the amorphous oxide semiconductor of the plurality of active layers.

9. The thin film field effect transistor according to claim 1, wherein a thickness of the first interface layer is 0.3 nm or more and less than 1.0 nm.

10. The thin film field effect transistor according to claim 1, wherein a thickness of the second interface layer is from 10 nm to 200 nm.

11. The thin film field effect transistor according to claim 1, wherein a thickness of the active layer is 1.0 nm or more and less than 20 nm, a thickness of the first interface layer is 0.3 nm or more and less than 1.0 nm, and a thickness of the second interface layer is from 10 nm to 200 nm.

12. The thin film field effect transistor according to claim 1, wherein oxygen vacancy densities of the active layer and the first interface layer are substantially the same.

13. The thin film field effect transistor according to claim 2, wherein oxygen vacancy densities of the active layer and the second interface layer are substantially the same.