THIN FILM FIELD EFFECT TRANSISTOR
First Claim
1. A thin film field effect transistor comprising:
- at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on a substrate, whereinthe active layer comprises an amorphous oxide semiconductor containing at least In and Zn;
a first interface layer comprising an amorphous oxide semiconductor containing Ga or Al is disposed between the gate insulating layer and the active layer such that it is adjacent to at least the active layer, a content of Ga or Al in the amorphous oxide semiconductor of the first interface layer being higher than a content of Ga or Al in the amorphous oxide semiconductor of the active layer; and
a second interface layer comprising an amorphous oxide semiconductor containing Ga or Al is disposed on the opposite side of the active layer with respect to the first interface layer such that it is adjacent to the active layer, a content of Ga or Al in the amorphous oxide semiconductor of the second interface layer being higher than the content of Ga or Al in the amorphous oxide semiconductor of the active layer.
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Accused Products
Abstract
A thin film field effect transistor has at least a gate electrode 2, a gate insulating layer 3, an active layer 4, a source electrode 5-1 and a drain electrode 5-2 on a substrate 1. The active layer includes an amorphous oxide semiconductor including at least In and Zn, a first interface layer 61 is disposed between the gate insulating layer and the active layer such that it is adjacent to at least the active layer, and a second interface layer is disposed on the opposite side of the active layer with respect to the first interface layer such that it is adjacent to the active layer. A content of Ga or Al in the amorphous oxide semiconductor of each of the first interface layer and the second interface layer is higher than a content of Ga or Al in the amorphous oxide semiconductor of the active layer.
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Citations
13 Claims
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1. A thin film field effect transistor comprising:
- at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on a substrate, wherein
the active layer comprises an amorphous oxide semiconductor containing at least In and Zn; a first interface layer comprising an amorphous oxide semiconductor containing Ga or Al is disposed between the gate insulating layer and the active layer such that it is adjacent to at least the active layer, a content of Ga or Al in the amorphous oxide semiconductor of the first interface layer being higher than a content of Ga or Al in the amorphous oxide semiconductor of the active layer; and a second interface layer comprising an amorphous oxide semiconductor containing Ga or Al is disposed on the opposite side of the active layer with respect to the first interface layer such that it is adjacent to the active layer, a content of Ga or Al in the amorphous oxide semiconductor of the second interface layer being higher than the content of Ga or Al in the amorphous oxide semiconductor of the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
- at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on a substrate, wherein
Specification