Radiation-Emitting Chip Comprising at Least One Semiconductor Body

• US 20100038673A1
• Filed: 01/31/2008
• Published: 02/18/2010
• Est. Priority Date: 02/21/2007
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Wirth, Ralph
• Granted Patent: US 8,067,783 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A chip includes at least one semiconductor body having a radiation-emitting region, and at least one first contact region which is provided for making electrical contact with the semiconductor body and is spaced apart laterally from the radiation-emitting region. An electrically conductive first contact layer which is transmissive to the emitted radiation and which connects a surface of the semiconductor body, is situated on the radiation exit side of the chip to the first contact region. The surface is free of the radiation-absorbing contact structures.

Claims

1. A chip comprising:

at least one semiconductor body having a radiation-emitting region;

at least one first contact region which is provided for making electrical contact with the at least one semiconductor body and is spaced apart laterally from the radiation-emitting region; and

an electrically conductive first contact layer, which is transmissive to emitted radiation and which connects a surface of the at least one semiconductor body that is situated on a radiation exit side of the chip to the at least one first contact region, wherein the surface is free of radiation-absorbing contact structures.

2. The chip according to claim 1, wherein the first contact layer on the radiation exit side is free of the radiation-absorbing contact structures.

3. The chip according to claim 1, wherein the at least one first contact region is spatially separated from the radiation-emitting region.

4. The chip according to claim 1, wherein the surface is covered for the most part by the first contact layer.

5. The chip according to claim 1, wherein the first contact layer forms a layer which outwardly delimits the chip in a main emission direction.

6. The chip according to claim 1, wherein the first contact layer contains a TCO.

7. The chip according to claim 1, wherein the at least one first contact region is a bonding pad or contact finger.

8. The chip according to claim 1, wherein the at least one first contact region comprises a metallic contact region.

9. The chip according to claim 1, wherein the at least one first contact region and the at least one semiconductor body are arranged on a common carrier.

10. The chip according to claim 9, further comprising a second contact layer that connects the at least one semiconductor body to a second contact region for making electrical contact with the at least one semiconductor body.

11. The chip according to claim 10, wherein the second contact region is applied to the common carrier.

12. The chip according to claim 11, wherein the at least one first contact region is disposed downstream of the second contact region in a vertical direction proceeding from the common carrier.

13. The chip according to claim 10, wherein the second contact region comprises a metallic contact region.

14. The chip according to claim 13, wherein the second contact region comprises a reflection layer.

15. The chip according to claim 14, wherein the second contact layer is arranged between the at least one semiconductor body and the second contact region and, together with the second contact region, forms a mirror.

16. The chip according to claim 10, wherein the second contact layer is transmissive to the emitted radiation.

17. The chip according to claim 10, wherein the second contact layer contains a TCO.

18. The chip according to claim 10, further comprising an insulating layer arranged between the at least one first contact region and the second contact region.

19. The chip according to claim 1, wherein the chip has a first and a second semiconductor body, which are spaced apart laterally and between which a first contact region is arranged.

20. The chip according to claim 1, wherein the at least one semiconductor body has a central perforation, in which the at least one first contact region is arranged.

21. The chip according to claim 1, wherein the chip is a thin-film light-emitting diode chip.

22. The chip according to claim 21, wherein an epitaxial layer sequence of the thin-film light-emitting diode chip has a thickness of at most 2 μ

m.