Forming Substrate Structure by Filling Recesses with Deposition Material

• US 20100041179A1
• Filed: 08/11/2009
• Published: 02/18/2010
• Est. Priority Date: 08/13/2008
• Status: Active Grant

• Current Assignee: Veeco Ald Inc. (Veeco Instruments Incorporated)
• Original Assignee: Synos Technology, Inc. (Veeco Instruments Incorporated)
• Inventors: LEE, Sang In
• Granted Patent: US 8,263,502 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02277 the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02315 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264

Abstract

A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Claims

1. A method for forming a substrate structure, comprising:

forming a first material layer on a substrate, one or more recesses formed on the substrate;

removing the first material layer from the substrate other than surfaces of the one or more recesses using a second material that reacts with the first material layer; and

forming a deposition film from the first material layer using a third material that reacts with the first material layer.

2. The method of claim 1, wherein removing the first material layer comprises controlling duration during which the substrate is exposed to the second material so that the surfaces of the one or more recesses are not exposed to the second material.

3. The method of claim 1, further comprising:

exposing the substrate to a purge gas responsive to forming the first material layer, removing the first material layer or forming the deposition film; and

pumping out the purge gas.

4. The method of claim 1, wherein the first material layer is a source precursor and the third material is a reaction precursor.

5. The method of claim 1, wherein the deposition film is formed of a dielectric material.

6. The method of claim 1, wherein the deposition film comprises at least one of an oxide or a nitride.

7. The method of claim 1, wherein the deposition film comprises at least one of SiO₂, PSG, BPSG, Al₂O₃, TiO₂, HfO₂, ZrO₂, ZnO, NiO, SiN and AlN.

8. The method of claim 1, wherein the first material layer comprises a silicon-containing inorganic compound or aluminum.

9. The method of claim 1, wherein the first material layer comprises at least one of SiH4, SiCl4, Si2H6, Si2Cl6, SiH2Cl2, Si3H8, an alkyl compound having an Si—

H bond, an alkoxide compound having an Si—

H bond, a siloxane compound having an Si—

H bond, a silicon-containing amine compound, or a compound modified therefrom.

10. The method of claim 1, wherein the first material layer comprises an aluminum-containing alkyl compound, an aluminum-containing alkoxide compound, an aluminum-containing amine compound, or a compound modified therefrom.

11. The method of claim 1, wherein the third material comprises at least one of H₂O, O₂, O₂ plasma, N₂O, N₂O plasma, O₃, H₂O plasma, NH₃, NH₃ plasma and N₂ plasma.

12. The method of claim 1, wherein the deposition film comprises at least one of Si, Ge, Si_xGe₁₋

x(0<

x<

0.5), boron-doped Si, phosphorus-doped Si, carbon-doped silicon, an oxide semiconductor, a nitride semiconductor, ZnO, NiO, CeO, EuO, AlN, GaN and InN.

13. The method of claim 1, wherein the first material layer comprises at least one of a silicon-containing inorganic compound, a germanium-containing inorganic compound, a carbon compound.

14. The method of claim 13, wherein the first material layer comprises at least one of a silicon hydride compound, a silicon chloride compound, a germanium hydride compound and a germanium chloride compound.

15. The method of claim 1, wherein the first material layer comprises at least one of SiH₄, SiCl₄, Si₂H₆, Si₂Cl₆, SiH₂Cl₂, Si₃H₈, GeH₄, GeCl₄, Ge₂H₆, Ge₂Cl₆, GeH₂Cl₂ and Ge₃H₈.

16. The method of claim 1, wherein the first material comprises at least one of CH₄, C₂H₆, C₃H₈, (CH₃)SiH₃, (CH₃)GeH₃, (C₂H₅)SiH₃ and (C₂H₅)GeH₃.

17. The method of claim 1, wherein the deposition film comprises an oxide semiconductor, and the first material layer comprises at least one of an alkyl compound, an alkoxide compound, a nitride semiconductor, a compound modified from;

and the first material layer comprises at least one of dimethylaluminum hydride, trimethylaluminum, triethylaluminum, trimethylgallium, triethylgallium, trimethylindium, triethylindium and a compound modified therefrom.

18. The method of claim 1, wherein the deposition film comprises a nitride semiconductor, and the first material comprises at least one of dimethylethylaminealuminum, dimethylaminobutylaluminum and a compound modified therefrom.

19. The method of claim 1, wherein the deposition film comprises Si, Ge or Si_xGe₁₋

x(0<

x<

0.5), the third material comprises hydrogen or hydrogen radical, and forming the deposition film comprises pyrolyzing the first material layer.

20. The method of claim 1, wherein the third material comprises at least one of nitrogen radical, NH₃, NH₃ plasma and N₂ plasma.

21. The method of claim 1, wherein forming the deposition film comprises exposing the substrate to remote plasma, microwave, electron cyclotron resonance plasma or UV (Ultraviolet) light.

22. The method of claim 1, wherein the deposition film comprises metal, metal compound, or a metal-silicon compound.

23. The method of claim 1, wherein the deposition film comprises at least one of Al, Ti, Ta, W, Cu, TiN, TaN, WN, GeSbTe, CuInGaSe, NiSi, CoSi and TiSi.

24. The method of claim 1, wherein the first material comprises at least one of an inorganic metal compound, an alkyl compound and a compound modified therefrom.

25. The method of claim 1, wherein the first material comprises at least one of AlCl₃, TiCl₄, TaCl₅ and WF₆.

26. The method of claim 1, wherein the first material comprises at least one of trimethylaluminum, triethylaluminum and dimethylaluminum hydride.

27. The method of claim 1, wherein the second material reacts with the first material to form a volatile material.

28. The method of claim 31, wherein the second material comprises at least one of hydrogen, chlorine, fluorine, hydrogen radical, chlorine radical and fluorine radical.

29. The method of claim 31, wherein the second material comprises at least one of HCl, BCl₃, ClF₃ and NF₃.

30. The method of claim 31, wherein removing the first material layer comprises exposing the substrate to remote plasma, a radical generation apparatus, microwave, electron cyclotron resonance plasma or UV (Ultraviolet) light.

31. The method of claim 34, wherein removing the first material layer comprises adjusting an incident angle of UV (Ultraviolet) light to the substrate such that UV light is not radiated on the surface of the one or more recesses.

32. The method of claim 1, further comprising forming OH bonds on the surface of the substrate before forming the first material layer by exposing the substrate to H₂O plasma, remote H₂O plasma or (OH)* radical.

33. The method of claim 1, wherein forming the first material layer, removing the first material layer and forming the deposition film are repeated at least two times, respectively.

34. The method of claim 1, further comprising forming an additional deposition film over the entire surface of the substrate.

35. A method of manufacturing a device comprising the method of forming a substrate structure, comprising:

forming a first material layer on a substrate, one or more recesses formed on the substrate;

removing the first material layer from the substrate other than surfaces of the one or more recesses using a second material that reacts with the first material layer; and

forming a deposition film from the first material layer using a third material that reacts with the first material layer.

36. A method of forming a substrate structure, comprising:

forming a deposition film on a substrate having one or more recesses; and

removing the deposition film from the substrate other than for surfaces of the one or more recesses using a first material that reacts with the deposition film.

37. The method of claim 36, wherein removing the deposition film comprises controlling duration for exposing the substrate to the first material such that the surfaces of the one or more recesses are not exposed to the first material.

38. The method of claim 36, further comprising exposing the substrate to a purge gas and pumping out the purge gas responsive to forming the deposition film or removing the deposition film.

39. The method of claim 36, wherein forming the deposition film comprises exposing the substrate to a source precursor and a reaction precursor.

40. The method of claim 39, wherein the source precursor comprises silicon or aluminum.

41. The method of claim 40, wherein the source precursor is a silicon-containing inorganic compound, a silicon hydride compound or a silicon chloride compound.

42. The method of claim 41, wherein the source precursor comprises at least one of SiH₄, SiCl₄, Si₂H₆, Si₂Cl₆, SiH₂Cl₂ and Si₃H₈.

43. The method of claim 41, wherein the source precursor is at least one of a silicon-containing organic compound or an aluminum-containing organic compound.

44. The method of claim 43, wherein the source precursor is an alkyl compound having an Si—

H bond, an alkoxide compound having an Si-H bond, a siloxane compound having an Si—

H bond, a silicon-containing amine compound, an aluminum-containing alkyl compound, an aluminum-containing alkoxide compound, an aluminum-containing amine compound, or a compound modified therefrom.

45. The method of claim 36, wherein the first material reacts with the deposition film to form a volatile material.

46. The method of claim 45, wherein the first material comprises at least one of hydrogen, chlorine, fluorine, hydrogen radical, chlorine radical and fluorine radical.

47. The method of claim 45, wherein the first material comprises at least one of HCl, BCl₃, ClF₃ and NF₃.

48. The method of claim 36, wherein removing the deposition film comprises exposing the substrate to remote plasma, a radical generation apparatus, microwave, electron cyclotron resonance plasma or UV (Ultraviolet) light.

49. The method of claim 48, wherein removing the deposition film comprises adjusting an incident angle of UV (Ultraviolet) light to the substrate such that the UV light is not radiated in the one or more recesses.

50. The method of claim 36, wherein the deposition film comprises an atomic layer of silicon, aluminum or titanium.

51. The method of claim 36, further comprising forming a modified film by reaction of the deposition film and a second material.

52. The method of claim 36, wherein the second material comprises at least one of H₂O, O₂, O₂ plasma, N₂O, N₂O plasma, O₃, H₂O plasma, NH₃, NH₃ plasma and N₂ plasma.

53. The method of claim 36, wherein the modified film comprises at least one of SiN, SiO₂, AlN, Al₂O₃, TiN and TiO₂.

54. The method of claim 36, further comprising forming OH bonds on the surface of the substrate before forming the deposition film.

55. The method of claim 36, wherein forming OH bonds comprises exposing the substrate to H₂O plasma, remote H₂O plasma or (OH)* radical.

56. The method of claim 36, wherein forming the deposition film and removing the deposition film are repeated at least two times, respectively.