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SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

  • US 20100041187A1
  • Filed: 10/23/2009
  • Published: 02/18/2010
  • Est. Priority Date: 10/09/1992
  • Status: Active Grant
First Claim
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1. A method for manufacturing a thin film semiconductor device:

  • forming an island like semiconductor region on an insulator;

    forming a gate electrode on the island like semiconductor region with a gate insulator film interposed therebetween;

    forming an oxide layer on side and top surfaces of the gate electrode;

    forming an insulator film over the oxide layer;

    etching the insulator film to form side walls adjacent to the gate electrode with the oxide layer interposed therebetween;

    forming a metal film over the side walls, the island like semiconductor region and the gate electrode;

    forming silicide regions on a surface of the island like semiconductor by a heat treatment; and

    annealing the silicide regions by irradiating a light after removing unreacted portions of the metal film.

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