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METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

  • US 20100041216A1
  • Filed: 10/20/2009
  • Published: 02/18/2010
  • Est. Priority Date: 09/05/2006
  • Status: Abandoned Application
First Claim
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1. A method of forming a nitride semiconductor substrate, comprising:

  • providing a substrate;

    forming a epitaxy layer on the substrate;

    forming a patterned mask layer on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer;

    performing an oxidation process to completely oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structure;

    removing the patterned mask layer; and

    forming a nitride semiconductor layer on the epitaxy layer having the dislocation blocking structures.

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