METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
First Claim
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1. A method of forming a nitride semiconductor substrate, comprising:
- providing a substrate;
forming a epitaxy layer on the substrate;
forming a patterned mask layer on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer;
performing an oxidation process to completely oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structure;
removing the patterned mask layer; and
forming a nitride semiconductor layer on the epitaxy layer having the dislocation blocking structures.
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Abstract
The present invention relates to a method of forming a nitride semiconductor substrate. This method includes steps of providing a substrate and then forming an epitaxy layer on the substrate. A patterned mask layer is formed on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer. Next, an oxidation process is performed to oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structures. The patterned mask layer is then removed. Further, a nitride semiconductor layer is formed on the epitaxy layer having the dislocation blocking structures.
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8 Claims
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1. A method of forming a nitride semiconductor substrate, comprising:
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providing a substrate; forming a epitaxy layer on the substrate; forming a patterned mask layer on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer; performing an oxidation process to completely oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structure; removing the patterned mask layer; and forming a nitride semiconductor layer on the epitaxy layer having the dislocation blocking structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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