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NOVEL METHOD TO INTEGRATE GATE ETCHING AS ALL-IN-ONE PROCESS FOR HIGH K METAL GATE

  • US 20100041236A1
  • Filed: 02/06/2009
  • Published: 02/18/2010
  • Est. Priority Date: 08/18/2008
  • Status: Active Grant
First Claim
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1. A method for making metal gate stacks of a semiconductor device comprising:

  • applying a first dry etching process to a semiconductor substrate in an etch chamber through openings of a patterned mask layer defining gate regions, removing a polysilicon layer and a metal gate layer on the semiconductor substrate;

    applying a H2O steam to the semiconductor substrate in the etch chamber, removing a capping layer on the semiconductor substrate; and

    applying a second dry etching process to the semiconductor substrate in the etch chamber, removing a high k dielectric material layer.

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