TUNABLE MULTI-ZONE GAS INJECTION SYSTEM
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Abstract
A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.
81 Citations
38 Claims
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1-15. -15. (canceled)
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16. A method of plasma processing a substrate comprising:
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placing a substrate on a substrate support in a processing chamber, wherein an interior surface of a dielectric member forming a wall of the processing chamber faces the substrate support; supplying process gas into the processing chamber from a gas injector extending through the dielectric member such that a distal end of the gas injector is exposed within the processing chamber, the gas injector including a plurality of gas outlets supplying process gas into the processing chamber; controlling the flow rate of the process gas to at least one of the outlets independently of the flow rate of the process gas to at least one other of the outlets; energizing the process gas into a plasma state by inductively coupling RF energy produced by the RF energy source through the dielectric member into the processing chamber, the process gas being plasma phase reacted with an exposed surface of the substrate. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A gas injector for supplying process gas into a semiconductor processing chamber comprising:
an injector body which includes at least first and second gas inlets, at least first and second gas passages, and at least first and second gas outlets, the first gas passage being in fluid communication with the first inlet and first outlet, the second gas passage being in fluid communication with the second inlet and second outlet, the first and second gas passages being discrete from each other so as to provide independently adjustable flow rates of gas through the first and second outlets. - View Dependent Claims (36, 37, 38)
Specification