Precursors for Depositing Silicon-containing Films and Methods for Making and Using Same

• US 20100041243A1
• Filed: 08/12/2008
• Published: 02/18/2010
• Est. Priority Date: 08/12/2008
• Status: Active Grant

• Current Assignee: Versum Materials US Inc.
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Gaffney, Thomas Richard, Xiao, Manchao, Cheng, Hansong, Wu, Jinping, Zhou, Chenggang, Lal, Gauri Sankar
• Granted Patent: US 8,129,555 B2
• Time in Patent Office: Days
• US Class Current: 438/778
• CPC Class Codes: C07F 7/025 without C-silicon linkages
• CPC Class Codes: C23C 16/345 Silicon nitride

Abstract

Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):

(R¹R²N)_nSiR³_4-n   (I)

wherein substituents R¹ and R² are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R¹ and R² comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO₂, PO(OR)₂, OR, SO, SO₂, SO₂R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R³ is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

Claims

1. An aminosilane precursor for depositing silicon-containing film comprising the following formula (I):

(R¹R²N)_nSiR³_4-n  

 

(I)

wherein substituents R¹ and R² are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms,

wherein at least one of substituents R¹ and R² comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO₂, PO(OR)₂, OR, RCOO, SO, SO₂, SO₂R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R³ is chosen from H, an alkyl group comprising from 1 to 20 carbon atoms, or an aryl group comprising from 6 to 12 carbon atoms,

and n is a number ranging from 1 to 4.

2. The aminosilane precursor of claim 1 wherein R¹ and R² are connected to form a ring structure.

3. The aminosilane precursor of claim 1 wherein the precursor is chosen from tris(1,1-dimethylhydrazino)-tert-buylsilane, bis(1,1-dimethylhydrazine)ethylsilane, bis(1,1-dimethylhydrazino)methylsilane, bis(diethylamino)silane, tris(iso-propylamino)silane, tris(tert-butylamino)silane, and.

4. The aminosilane precursor of claim 3 comprising tris(1,1-dimethylhydrazino)-tert-buylsilane.

5. The amino precursor of claim 3 comprising bis(1,1-dimethylhydrazine)ethylsilane.

6. The aminosilane precursor of claim 3 comprising bis(1,1-dimethylhydrazino)methylsilane.

7. The aminosilane precursor of claim 3 comprising bis(diethylamino)silane.

8. The aminosilane precursor of claim 3 comprising tris(iso-propylamino)silane.

9. The aminosilane precursor of claim 3 comprising tris(tert-butylamino)silane.

10. The aminosilane precursor of claim 3 comprising bis(3,3-difluoropiperdine)silane

11. A process for depositing a silicon-containing film on a substrate via chemical vapor deposition, the process comprising:

providing the substrate in a process chamber;

introducing an aminosilane precursor into the process chamber at a temperature and a pressure sufficient to react and deposit the silicon-containing film on the substrate wherein the aminosilane precursor comprises a compound having the following formula (I);

(R¹R²N)_nSiR³_4-n  

 

(I)

wherein substituents R¹ and R² are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms,

wherein at least one of substituents R¹ and R² comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO₂, PO(OR)₂, OR, RCOO, SO, SO₂, SO₂R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, and R³ is chosen from H, an alkyl group comprising from 1 to 20 carbon atoms, or an aryl group comprising from 6 to 12 carbon atoms, and n is a number ranging from 1 to 4.

12. The process of claim 11 wherein the introducing step further comprises a nitrogen source chosen from ammonia, nitrogen and hydrazine.

13. The process of claim 12 wherein the nitrogen source is ammonia or nitrogen and the nitrogen source is present in a nitrogen source:

precursor range of from 0.1 to 4;

1.

14. The process of claim 11 wherein the temperature ranges from about 400°

C. to about 700°

C.

15. The process of claim 11 wherein the pressure ranges from about 20 mTorr to about 20 Torr.

16. An aminosilane precursor for depositing silicon-containing film comprising the following formula (II):

A_nSiR⁴_4-n  

 

(II)

wherein A is at least one group chosen from the following amino groups (a) through (i), R⁴ is chosen from an alkyl group comprising from 1 to 20 carbon atoms or an aryl group comprising from 6 to 12 carbon atoms, and n is a number ranging from 1 to 4