Methods of Fabricating Complex Two-Dimensional Conductive Silicides

• US 20100044072A1
• Filed: 08/25/2009
• Published: 02/25/2010
• Est. Priority Date: 08/25/2008
• Status: Active Grant

• Current Assignee: Trustees of Boston College (Boston College)
• Original Assignee: Trustees of Boston College (Boston College)
• Inventors: Wang, Dunwei, Zhou, Sa
• Granted Patent: US 8,158,254 B2
• Time in Patent Office: Days
• US Class Current: 174/126.100
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 33/06 Metal silicides alloys C22
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/413 Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires nanosized carbon materials, e.g. carbon nanotubes, per se C01B32/15; transparent electrodes comprising carbon nano-tubes H10K30/821, nanotechnology per se B82B
• CPC Class Codes: H01L 31/035227 the quantum structure being quantum wires, or nanorods carbon nanotubes H10K85/211
• CPC Class Codes: H01M 4/1395 of electrodes based on metals, Si or alloys
• CPC Class Codes: H01M 4/386 Silicon or alloys based on silicon
• CPC Class Codes: Y02E 60/10 Energy storage using batteries
• CPC Class Codes: Y10T 428/2913 Rod, strand, filament or fiber

Abstract

The embodiments disclosed herein relate to the fabrication of complex two-dimensional conductive silicide nanostructures, and methods of fabricating the nanostructures. In an embodiment, a conductive silicide includes a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle, the plurality of nanobeams forming a two-dimensional nanostructure having a mesh-like appearance. In an embodiment, a method of fabricating a two-dimensional conductive silicide includes performing chemical vapor deposition, wherein one or more gas or liquid precursor materials carried by a carrier gas stream react to form a nanostructure having a mesh-like appearance and including a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle.

Claims

1. A conductive silicide comprising a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle, the plurality of nanobeams forming a two-dimensional nanostructure having a mesh-like appearance.

2. The silicide of claim 1 wherein the silicide is selected from the group consisting of titanium silicide, nickel silicide, iron silicide, platinum silicide, chromium silicide, cobalt silicide, molybdenum silicide and tantalum silicide.

3. The silicide of claim 1 wherein the silicide is titanium silicide.

4. The silicide of claim 1 wherein the plurality of nanobeams are linked together by single crystalline junctions.

5. The silicide of claim 1 belonging to a crystal system selected from the group consisting of hexagonal, tetragonal and orthorhombic.

6. The silicide of claim 1 having a C49 structure.

7. The silicide of claim 1 wherein the plurality of nanobeams have a width of at least about 25 nm.

8. The silicide of claim 1 wherein the plurality of nanobeams are at least about 1.0 μ

m long.

9. The silicide of claim 1 wherein an overall width of the nanostructure is at least about 1.0 μ

m.

10. The silicide of claim 1 wherein an overall thickness of the nanostructure is about 15 nm.

11. The silicide of claim 1 for use in a nanoelectronics device.

12. The silicide of claim 1 for use in an energy-related device.

13. The silicide of claim 1 for use in a planar electronic device.

14. A conductive silicide nanostructure comprising a plurality of two-dimensional nanonet sheets, wherein each of the nanonet sheets include connected and spaced-apart nanobeams linked together at an about 90-degree angle.

15. The conductive silicide nanostructure of claim 14 wherein the plurality of nanonet sheets are stacked approximately horizontally.

16. The conductive silicide nanostructure of claim 14 wherein the plurality of nanonet sheets have an electrical resistivity of approximately 10 μ

Ω

·

cm.

17. A method of fabricating a two-dimensional conductive silicide comprising performing chemical vapor deposition, wherein one or more gas or liquid precursor materials carried by a carrier gas stream react to form a nanostructure having a mesh-like appearance and including a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle.

18. The method of claim 17 wherein the silicide is selected from the group consisting of titanium silicide, nickel silicide, iron silicide, platinum silicide, chromium silicide, cobalt silicide, molybdenum silicide and tantalum silicide.

19. The method of claim 17 wherein the one or more gas or liquid precursor materials is selected from a titanium containing chemical and a silicon containing chemical.

20. The method of claim 17 wherein the carrier gas is selected from the group consisting of H, HCl, HF, Cl₂, and F₂.

21. The method of claim 17 wherein the plurality of nanobeams are linked together by single crystalline junctions.

22. The method of claim 17 wherein an overall thickness of the nanostructure is about 15 nm.

23. The method of claim 17 having an electrical resistivity of about 10 micro-ohm-centimeters.