Metal Deposition

• US 20100044080A1
• Filed: 10/29/2009
• Published: 02/25/2010
• Est. Priority Date: 08/27/1999
• Status: Abandoned Application

• Current Assignee: Littelfuse Incorporated
• Original Assignee: Littelfuse Incorporated
• Inventors: Kosowsky, Lex
• Application Number:
  US12/608,326
• Publication Number:
  US 20100044080A1
• Time in Patent Office: Days
• US Class Current: 174/250
• CPC Class Codes: C25D 5/022 using masking means
• CPC Class Codes: C25D 5/56 of plastics
• CPC Class Codes: H05K 1/0373 containing additives, e.g. fillers H05K1/036 takes precedence
• CPC Class Codes: H05K 2201/0191 wherein the thickness of the dielectric plays an important role
• CPC Class Codes: H05K 2201/0215 Metallic fillers
• CPC Class Codes: H05K 2201/0738 Use of voltage responsive materials, e.g. voltage switchable dielectric or varistor materials
• CPC Class Codes: H05K 2201/09036 Recesses or grooves in insulating substrate
• CPC Class Codes: H05K 2203/1492 Periodical treatments, e.g. pulse plating of through-holes
• CPC Class Codes: H05K 3/07 being removed electrolytically
• CPC Class Codes: H05K 3/107 by filling grooves in the support with conductive material H05K3/045, H05K3/101, H05K3/1258 and H05K3/465 take precedence
• CPC Class Codes: H05K 3/188 by direct electroplating

Abstract

Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.

Claims

1. A method for fabricating a current-carrying formation, the method comprising:

providing a layer of a voltage switchable dielectric material, the layer including a first region having a first characteristic voltage and a second region having a second characteristic voltage greater than the first characteristic voltage;

exposing the voltage switchable dielectric material to a source of ions associated with an electrical conductor;

creating a first voltage between the layer and the source of ions, the first voltage greater than the first characteristic voltage and less than the second characteristic voltage; and

depositing the electrical conductor on the first region.

2. The method of claim 1, wherein the layer is provided on a conductive backplane.

3. The method of claim 1 wherein the voltage switchable dielectric material in the first region has a first thickness and the voltage switchable dielectric material in the second region has a second thickness.

4. The method of claim 1, wherein the electrical conductor is not deposited on the second region under the first voltage.

5. The method of claim 1, wherein any of the first and second regions includes two or more voltage switchable dielectric materials.

6. The method of claim 1, wherein the electrical conductor includes any of Cu, Al, Ti, Ag, Au, and Pt.

7. The method of claim 1, wherein depositing includes electroplating.

8. The method of claim 1, wherein the first voltage includes a cyclic voltage.

9. The method of claim 1, wherein the first voltage is between 2 and 50 volts.

10. The method of claim 9, wherein the first voltage is between 5 and 20 volts.

11. The method of claim 1, further comprising:

creating a second voltage between the layer and the source of ions, the second voltage greater than the first and second characteristic voltages; and

depositing the electrical conductor on the first and second regions.

12. A method for fabricating a current-carrying formation, the method comprising:

providing a layer of a voltage switchable dielectric material, the layer including a first region having a first characteristic voltage and a second region having a second characteristic voltage greater than the first characteristic voltage;

exposing the voltage switchable dielectric material to a source of ions associated with an electrical conductor;

creating a first voltage between the layer and the source of ions, the first voltage greater than the first and second characteristic voltages; and

depositing the electrical conductor on the first and second regions.

13. The method of claim 12, further comprising etching the electrical conductor from the first region.

14. The method of claim 13, wherein the second region retains at least a portion of the electrical conductor after etching.

15. The method of claim 12, further comprising:

creating a second voltage between the layer and the source of ions, the second voltage greater than the first characteristic voltage and less than the second characteristic voltage, the second voltage having a polarity that induces an etching of the deposited electrical conductor; and

etching the electrical conductor from the first region.

16. The method of claim 15, wherein the second region retains at least a portion of the electrical conductor after etching.

17. The method of claim 12, wherein the layer is provided on a conductive backplane.

18. The method of claim 12 wherein the voltage switchable dielectric material in the first region has a first thickness and the voltage switchable dielectric material in the second region has a second thickness.

19. The method of claim 12, wherein any of the first and second regions includes two or more voltage switchable dielectric materials.

20. The method of claim 12, wherein the electrical conductor includes any of Cu, Al, Ti, Ag, Au, and Pt.

21. The method of claim 12, wherein depositing includes electroplating.

22. The method of claim 12, wherein the first voltage includes a cyclic voltage.

23. The method of claim 15, wherein the second voltage includes a cyclic voltage.

24. A structure comprising:

a conductive backplane;

a voltage switchable dielectric material disposed on the conductive backplane, the voltage switchable dielectric material having a first region with a first characteristic voltage and a second region with a second characteristic voltage; and

one or more conductors deposited on any of the first and second regions.