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Metal Deposition

  • US 20100044080A1
  • Filed: 10/29/2009
  • Published: 02/25/2010
  • Est. Priority Date: 08/27/1999
  • Status: Abandoned Application
First Claim
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1. A method for fabricating a current-carrying formation, the method comprising:

  • providing a layer of a voltage switchable dielectric material, the layer including a first region having a first characteristic voltage and a second region having a second characteristic voltage greater than the first characteristic voltage;

    exposing the voltage switchable dielectric material to a source of ions associated with an electrical conductor;

    creating a first voltage between the layer and the source of ions, the first voltage greater than the first characteristic voltage and less than the second characteristic voltage; and

    depositing the electrical conductor on the first region.

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