HYBRID METAL-SEMICONDUCTOR NANOPARTICLES AND METHODS FOR PHOTO-INDUCING CHARGE SEPARATION AND APPLICATIONS THEREOF

• US 20100044209A1
• Filed: 02/20/2008
• Published: 02/25/2010
• Est. Priority Date: 02/20/2007
• Status: Abandoned Application

• Current Assignee: Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. (Hebrew University of Jerusalem)
• Original Assignee: Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. (Hebrew University of Jerusalem)
• Inventors: Costi, Ronny, Banin, Uri
• Application Number:
  US12/449,642
• Publication Number:
  US 20100044209A1
• Time in Patent Office: Days
• US Class Current: 204/157.520
• CPC Class Codes: B01J 27/0573 Selenium; Compounds thereof
• CPC Class Codes: B01J 35/39 Photocatalytic properties
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C01B 3/042 Decomposition of water
• CPC Class Codes: C25B 1/55 Photoelectrolysis
• CPC Class Codes: H01B 1/16 the conductive material comprising metals or alloys
• CPC Class Codes: H01G 9/20 Light-sensitive devices
• CPC Class Codes: H10K 30/352 the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02E 60/36 Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
• CPC Class Codes: Y02P 20/133 Renewable energy sources, e.g. sunlight

Abstract

The development and use of hybrid metal-semiconductor nanoparticles for photocatalysis of a variety of chemical reactions such as redox reactions and water-splitting, is provided.

Claims

1-67. -67. (canceled)

68. A method of photo-inducing charge separation and transfer of a charge carrier to a charge acceptor, the method comprising:

providing at least one nanoparticle comprising at least one metal/metal alloy region and at least one semiconductor region, having an absorption onset in the visible (400-700 nm) to near infrared (NIR) range (0.7-3 μ

m);

contacting the at least one nanoparticle with at least one electron acceptor and at least one electron donor in a medium selected from a liquid medium, a gel, or a solid medium, wherein a plurality of the at least one nanoparticles is freely-distributed in the medium; and

optionally, irradiating the medium containing the at least one nanoparticle, at least one electron acceptor and at least one electron donor with radiation in the visible and/or near IR range and optionally UV range;

thereby allowing formation of an electron-hole pair in the metal/semiconductor interface of the at least one nanoparticle and subsequent charge separation and transfer of the electron and hole to the at least one electron acceptor and the at least one electron donor, respectively,

the at least one nanoparticle having an elongated shape, a rod-like shape, an elliptical shape, a pyramidal shape or a disk-like shape.

69. The method according to claim 68, wherein the at least one nanoparticle comprises at least two metal/metal alloy regions, separated by at least one semiconductor region, wherein each of the at least two metal/metal alloy regions is of a different or same metal/metal alloy material.

70. The method according to claim 68, wherein the at least one nanoparticle comprises at least two metal/metal alloy regions, separated by at least two semiconductor regions, wherein each of the at least two metal/metal alloy regions is of a different or same metal/metal alloy material and each of the at least two semiconductor regions have a different energy gap and/or different energy band positions.

71. The method according to claim 70, wherein the at least two semiconductor regions are separated by at least one metal/metal alloy region.

72. The method according to claim 71, wherein each of the at least two semiconductor regions is of a different semiconducting material, the regions being not separated by a metal/metal alloy region.

73. The method according to claim 68, wherein the at least one nanoparticle is a nanorod or a nanodumbbell, NDB.

74. The method according to claim 73, wherein the NDB has at one of its ends a first metal/metal alloy region and on the other of its ends a second metal/metal alloy region, the first and second metal/metal alloy regions differing from each other in their chemical composition.

75. The method according to claim 74, wherein the NDB has at least one additional metal/metal alloy region in the elongated segment of the nanostructure.

76. The method according to claim 73, wherein the at least one nanoparticle is in the form of a nanorod having on its surface at least one region of at least one metal/metal alloy material.

77. The method according to claim 76, wherein the nanorod has on its surface a plurality of spaced apart metal/metal alloy regions, of the same or different metal/metal alloy material.

78. The method according to claim 68, wherein the at least one metal/metal alloy region is of at least one metal selected from the group consisting of Cu, Ag, Au, Pt, Co, Pd, Ni, Ru, Rh, Mn, Cr, Fe, Ti, Zn, Ir, W, Mo, and alloys thereof.

79. The method according to claim 68, wherein the at least one semiconductor region is of a semiconducting material selected from elements of Group II-VI, Group III-V, Group IV-VI, Group III-VI, Group IV semiconductors and combinations thereof.

80. The method according to claim 79, wherein the metal is selected from the group consisting of Au, Pd, Pt, and alloys thereof.

81. The method according to claim 79, wherein the at least one semiconductor is of Group II-VI and is selected from the group consisting of CdSe, CdS, CdTe, ZnSe, ZnS, ZnTe, HgS, HgSe, HgTe, CdZnSe, and alloys thereof.

82. The method according to claim 79, wherein the at least one semiconductor is of Group III-V and is selected from the group consisting of InAs, InP, GaAs, GaP, InN, GaN, InSb, GaSb, AlP, AlAs, AlSb, InAsP, CdSeTe, ZnCdSe, InGaAs, and alloys thereof.

83. The method according to claim 79, wherein the at least one semiconductor is of Group IV-VI and is selected from the group consisting of PbSe, PbTe, PbS, and alloys thereof.

84. The method according to claim 79, wherein the at least one semiconductor is of Group III-VI and is selected from the group consisting of InSe, InTe, InS, GaSe, InGaSe, InSeS, and alloys thereof.

85. The method according to claim 79, wherein the at least one semiconductor is of Group IV and is selected from the group consisting of Si, Ge, and alloys thereof.

86. The method according to claim 68, wherein the at least one semiconductor region is of CdS, CdSe or CdTe and the at least one metal/metal alloy region is of Au, Pt, Pd, or alloys thereof.

87. The method according to claim 68, wherein the radiation is solar radiation.

88. A method for reducing at least one first organic or inorganic compound, and/or oxidizing at least one second organic or inorganic compound, the method comprising:

providing at least one nanoparticle comprising at least one metal/metal alloy region and at least one semiconductor region;

contacting the at least one nanoparticle with the at least one first organic or inorganic compound being an electron acceptor and at least one second organic or inorganic compound being an electron donor in a medium; and

optionally, irradiating the medium with radiation in the visible and/or near IR range and optionally UV range;

thereby allowing reduction of the at least one first organic or inorganic compound and/or oxidation of the at least one second organic or inorganic compound,

the at least one nanoparticles having an elongated shape, a rod-like shape, an elliptical shape, a pyramidal shape or a disk-like shape.

89. A method for the photocatalytic production of hydrogen, the method comprising irradiating an aqueous medium comprising at least one nanoparticle having at least one metal/metal alloy region and at least one semiconductor region and a shape selected from an elongated shape, a rod-like shape, an elliptical shape, a pyramidal shape and a disk-like shape, with light in the visible and/or near IR range and optionally UV range to obtain hydrogen following water splitting.

90. The method according to claim 89, wherein the light is solar light.

91. The method according to claim 89, wherein the aqueous medium is water.

92. The method according to claim 89, wherein the aqueous medium is a medium comprising water.