Semiconductor Film Composition

• US 20100044698A1
• Filed: 07/31/2006
• Published: 02/25/2010
• Est. Priority Date: 10/12/2005
• Status: Active Grant

• Current Assignee: David Blessing, David Punsalan, Douglas Keszler, Gregory Herman, Jeremy Anderson, Randy Hoffman
• Original Assignee: David Blessing, David Punsalan, Douglas Keszler, Gregory Herman, Jeremy Anderson, Randy Hoffman
• Inventors: Punsalan, David, Blessing, David, Anderson, Jeremy, Herman, Gregory, Hoffman, Randy, Keszler, Douglas
• Granted Patent: US 8,969,865 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.

Claims

1. A semiconductor film composition, comprising:

an oxide semiconductor material; and

at least one polyatomic ion incorporated into the oxide semiconductor material.

2. The semiconductor film composition as defined in claim 1 wherein the at least one polyatomic ion is selected from sulfates, borates, phosphates, tungstates, silicates, and combinations thereof.

3. The semiconductor film composition as defined in any of claims 1 and 2 wherein a liquid precursor of the semiconductor film composition is adapted to substantially inhibit crystallization during processing.

4. The semiconductor film composition as defined in any of claims 1 through 3 wherein the polyatomic ion is incorporated as an anion or a cation into the oxide semiconductor material.

5. A method of making a semiconductor film, the method comprising:

dissolving at least one metal salt in an aqueous solution, the aqueous solution or the at least one metal salt including at least one polyatomic ion, thereby forming a precursor solution;

establishing the precursor solution on a substrate; and

polymerizing the precursor solution, thereby forming a film having the at least one polyatomic ion incorporated therein.

6. The method as defined in claim 5, further comprising annealing the film, thereby forming the semiconductor film.

7. The method as defined in any of claims 5 and 6 wherein the aqueous solution includes water and an acid having the at least one polyatomic ion.

8. The method as defined in any of claims 5 through 7 wherein the at least one metal salt includes the at least one polyatomic ion.

9. A method of forming a film having at least one polyatomic ion incorporated therein, the method comprising:

establishing a first film having the at least one polyatomic ion incorporated therein on a second film without a polyatomic ion therein; and

diffusing the at least one polyatomic ion into the second film.

10. The method as defined in claim 9 wherein the film having the at least one polyatomic ion incorporated therein is one of a dielectric film, a semiconductor film, and a conductor film.