SEMICONDUCTOR DEVICE WITH A REDUCED BAND GAP AND PROCESS
First Claim
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1. A semiconductor device comprising:
- a body zone, a drain zone and a source zone;
a gate which extends between the source zone and the drain zone; and
a reduced band gap region in a region of the body zone, comprising of at least ternary compound semiconductor material.
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Abstract
The application relates to a semiconductor device made of silicon with regionally reduced band gap and a process for the production of same. One embodiment provides a semiconductor device including a body zone, a drain zone and a source zone. A gate extends between the source zone and the drain zone. A reduced band gap region is provided in a region of the body zone, made of at least ternary compound semiconductor material.
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Citations
24 Claims
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1. A semiconductor device comprising:
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a body zone, a drain zone and a source zone; a gate which extends between the source zone and the drain zone; and a reduced band gap region in a region of the body zone, comprising of at least ternary compound semiconductor material. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device made of silicon comprising:
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a body zone; a drain zone which forms a pn-junction with the body zone; a source zone with the same type of conductivity as the drain zone, the source zone being positioned in the region of the body zone; a gate which extends between the source zone and the drain zone; a source electrode which is positioned in a source contact opening and projects into the body zone; and the source contact opening in the region of the body zone beneath the source electrode having a zone of at least ternary compound semiconductor material with a band gap which is smaller than the band gap of silicon. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12)
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13. A process for the production of a semiconductor devices with regionally reduced band gap, the process comprising:
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providing a silicon semiconductor wafer as the semiconductor substrate; introducing into the silicon semiconductor wafer semiconductor structures which comprise at least one body zone, one drain zone, one MOS gate and one source zone; producing source contact openings which project through the source zone into the body zone and terminate shortly before a pn-junction to a drain zone positioned beneath it; depositing a sequence of layers made of a ternary compound semiconductor material in an lower region of the source contact openings; and filling the source contact openings with electrically conducting material for a source electrode. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A process for the production of a semiconductor device with regionally reduced band gap, the process comprising:
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providing a silicon semiconductor wafer as the semiconductor substrate; introducing a trench structure to receive at least one MOS trench gate structure; introducing semiconductor structures which have at least one body zone, one drain zone, one MOS trench gate and one source zone into the silicon semiconductor wafer; producing source contact openings which project through the source zone into the body zone and terminate shortly before a pn-junction to a drain zone positioned beneath it; depositing a sequence of layers made of a ternary compound semiconductor material in a lower region of the source contact openings; and filling the source contact openings with electrically conductive material for a source electrode.
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24. A process for the production of a semiconductor device with regionally reduced band gap, the process comprising:
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providing a silicon semiconductor wafer as the semiconductor substrate; introducing a trench structure to receive a field plate structure and a MOS trench gate structure; introducing semiconductor structures which have at least one body zone, one drain zone, one field plate, one MOS trench gate and one source zone into the silicon semiconductor wafer; producing source contact openings which project through the source zone into the body zone and terminate shortly before a pn-junction to a drain zone positioned beneath it; following completion of the high temperature processes, the deposition of a sequence of layers made of a ternary compound semiconductor material in a lower region of the source contact openings; and filling of the source contact openings with electrically conductive material for a source electrode.
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Specification