Semiconductor apparatus and method of manufacturing same

• US 20100044736A1
• Filed: 10/29/2009
• Published: 02/25/2010
• Est. Priority Date: 01/21/2004
• Status: Abandoned Application

• Current Assignee: Pioneer Corporation
• Original Assignee: Pioneer Corporation
• Inventors: Nagayama, Kenichi
• Application Number:
  US12/588,838
• Publication Number:
  US 20100044736A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 71/70 Testing, e.g. accelerated lifetime tests
• CPC Class Codes: H10K 71/861 Repairing

Abstract

Disclosed is a semiconductor apparatus having a sealing structure that allows high-precision detection of defects occurring in a protective film, and a method of manufacturing the same. A semiconductor apparatus 1 includes a substrate 10, a semiconductor device 14 formed on the substrate 10, and a protective film 17 for sealing the semiconductor device 14. The semiconductor apparatus 1 further includes a first conductive layer 16 in contact with a back surface of the protective film 17, and a second conductive layer 18 in contact with a front surface of the protective film 17.

Claims

1-23. -23. (canceled)

24. A semiconductor apparatus comprising a substrate, a semiconductor device formed on said substrate, and a protective film for sealing said semiconductor device, said semiconductor apparatus further comprising:

a first conductive layer in contact with a back surface of said protective film; and

a second conductive layer in contact with a front surface of said protective film,

wherein said semiconductor device includes an outermost electrode layer as said first conductive layer.

25. The semiconductor apparatus according to claim 24, further comprising:

a first electrode terminal electrically connected with the first conductive layer, and

a second electrode terminal electrically connected with the second conductive layer,

wherein each of the first electrode terminal and the second electrode terminal has a surface area such that a metal probe can make contact therewith.

26. The semiconductor apparatus according to claim 24, further comprising an insulating film of electrical insulation formed on said semiconductor device, said first conductive layer being formed on said insulating film.

27. The semiconductor apparatus according to claim 24, wherein at least one of said first conductive layer and said second conductive layer is patterned into stripes.

28. The semiconductor apparatus according to claim 24, wherein said first conductive layer and said second conductive layer are patterned into stripes so as to cross each other.

29. The semiconductor apparatus according to claim 25, wherein said first and second electrode terminals are formed on a peripheral part of said substrate, said peripheral part being located outside an area in which said semiconductor device is formed.

30. The semiconductor apparatus according to claim 25, wherein at least either one of said first electrode terminal and said second electrode terminal is made of a plurality of electrode pieces arranged at predetermined intervals along a peripheral part of said substrate.

31. The semiconductor apparatus according to claim 24, wherein said semiconductor device includes an electroluminescent device.