CARRIER AND OPTICAL SEMICONDUCTOR DEVICE BASED ON SUCH A CARRIER

• US 20100044746A1
• Filed: 12/14/2007
• Published: 02/25/2010
• Est. Priority Date: 12/21/2006
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Steenbruggen, Gerardus Henricus Franciscus Willebrordus
• Granted Patent: US 8,664,683 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02325 the optical elements not being integrated nor being directly associated with the device
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: Y10T 156/10 Methods of surface bonding and/or assembly therefor

Abstract

A method for providing, on a carrier (40), an insulative spacer layer (26) which is patterned such that a cavity (27) is formed which enables connection of an optical semiconductor element (41) to the intended conductor structure (22) when placed inside the cavity (27). The cavity (27) is formed such that it, through its shape, extension and/or depth, accurately defines a location of an optical element (45; 61) in relation to the optical semiconductor element (41). Through the provision of such a patterned insulative spacer layer, compact and cost-efficient optical semiconductor devices can be mass-produced based on such a carrier without the need for prolonged development or acquisition of new and expensive manufacturing equipment.

Claims

1. A method for manufacturing a carrier (40) for enabling accurate positioning of an optical element (45;

61) in relation to a optical semiconductor element (41) to be connected to the carrier (40), the method comprising the steps of;

providing (201) an electrically conductive multi-layer carrier base sheet (10) having an upper carrier layer (13), a lower carrier layer (14), and an intermediate carrier layer (12) between said upper and lower carrier layers;

forming (206, 207) an upper conductor structure (22) in said upper and intermediate carrier layers (13, 12); and

providing (208, 209) a patterned insulative spacer layer (26) on an upper carrier layer side of said carrier base sheet (10),

wherein;

said insulative spacer layer (26) is patterned such that at least one cavity (27) is formed in which said optical semiconductor element (41) is connectable to said upper conductor structure (22), a depth of said cavity (27) being greater than a height of the optical semiconductor element (41) when connected to said carrier (10); and

said cavity (27) is formed to define a location of said optical element (45;

61) in relation to said optical semiconductor element (41).

2. A method according to claim 1, wherein said step of providing a patterned insulative spacer layer (26) comprises the steps of:

providing (208) an insulative spacer layer (24) on said upper carrier layer side of the carrier base sheet (10); and

patterning (209) said insulative spacer layer such that said cavity (27) is formed.

3. A method according to claim 2, wherein said insulative spacer layer is an insulative spacer sheet (24) which is laminated to said upper carrier layer side of the carrier base sheet (10).

4. A method according to claim 2, wherein:

said insulative spacer layer comprises a photoimageable material, and

said step (209) of patterning comprises the steps of;

positioning a mask (25) between a light-source and said insulative spacer layer (24);

exposing said insulative spacer layer (24) through said mask (25) by means of said light-source; and

developing the pattern defined by said exposure.

5. A method according to claim 1, wherein said step of providing a patterned insulative spacer layer (26) comprises the steps of:

providing a pre-patterned insulative spacer sheet in which said cavity is pre-formed; and

laminating said pre-patterned insulative spacer sheet to said upper carrier layer side of the carrier base sheet such that a position of said pre-formed cavity corresponds to an intended position of said optical semiconductor element to be connected to said carrier.

6. A method according to claim 1, further comprising the step of:

providing an intermediate insulative layer between said upper carrier layer and said patterned insulative spacer layer,

wherein said intermediate insulative layer is configured such that electrical connection between said upper conductor structure (22;

43) and connector bumps (42) provided on said optical semiconductor element (41) is achievable through said intermediate insulative layer by applying heat and pressure to said optical semiconductor element (41) when positioned on said intermediate film with said bumps (42) facing the intermediate film such that positions of the bumps correspond to said conductor structure (22;

43).

7. A method according to claim 1, wherein said intermediate carrier layer comprises a different metal than said upper (13) and lower (14) carrier layers, said metal being selected such that said intermediate carrier layer (12) is etchable by an etchant that leaves said upper (12) and lower (14) carrier layers substantially intact, thereby enabling under-etching of said upper carrier layer, such that recesses (23) are formed in said conductor structure (22), enabling improved anchoring of a subsequently applied encapsulant (46).

8. A method according to claim 1, further comprising the step of:

forming a lower conductor structure in said lower carrier layer, such that leads are formed for enabling electrical connection of said optical semiconductor element to an external device, said leads being electrically isolated from each other.

9. A method for manufacturing an optical semiconductor device (50;

60) having an accurate positioning of an optical element (45;

61) in relation to a optical semiconductor element (41) included in said semiconductor device (50;

60), the method comprising the steps according to claim 1, and further comprising the steps of;

connecting (402) said optical semiconductor element to said upper conductor structure (22) in the cavity (27) formed by said patterned insulative spacer layer (26); and

providing (403;

601) said optical element (45;

61) in said location defined by said patterned insulative spacer layer (26).

11. A method according to claim 9, further comprising the step of:

forming (403;

601) a lower conductor structure (47) in said lower carrier layer (14), such that leads are formed for enabling electrical connection of said optical semiconductor element (41) to an external device, said leads being electrically isolated from each other.

12. A method according to claim 9, wherein said optical semiconductor element (41) is connected to said upper conductor structure (22) by connecting bumps (42) provided on the optical semiconductor element (41) with pads (43) comprised in the upper conductor structure (22).

13. A method according to claim 9, wherein said optical element (61) is provided by filling (601) said cavity (27) with a liquid optically active substance (46) which is adapted to act as an optical element (61), such as a diffuser, when covering said optical semiconductor element (41).

14. A method according to claim 9, wherein said step of providing (403) the optical element (45) comprises the steps of:

positioning said optical element (45) in said location defined by the patterned insulative spacer layer (26); and

filling a space defined by said cavity (27) and said optical element (45) with a resilient optical compound (46), for reducing stress on the semiconductor device (41).

15. A method according to claim 9, wherein:

said insulative spacer layer (26) is patterned such that a plurality of cavities (27) are formed;

at least one optical semiconductor element (41) is connected to said conductor structure (22) in each of said cavities (27); and

an optical element (45;

61) is provided for each of said cavities (27) in locations defined by said patterned insulative spacer layer (26), a panel comprising a plurality of said optical semiconductor devices (50;

60) thereby being formed, said method further comprising the step of;

separating said panel into individual optical semiconductor devices (50;

60) or tiles of optical semiconductor devices.

10. A method for manufacturing an optical semiconductor device (50;

60) having an accurate positioning of an optical element (45;

61) in relation to a optical semiconductor element (41) included in said semiconductor device (50;

60), the method comprising the steps of;

providing (401) a carrier (40) including;

an electrically conductive multi-layer carrier base sheet (10) having an upper carrier layer (13), a lower carrier layer (14), and an intermediate carrier layer (12) between said upper and lower carrier layers, said upper and intermediate carrier layers having an upper conductor structure (22) formed therein; and

a patterned insulative spacer layer (26) arranged on an upper carrier layer side of said carrier base sheet (10), wherein;

said insulative spacer layer (26) is patterned such that at least one cavity (27) is formed in which said optical semiconductor element (41) is connectable to said upper conductor structure (22), a depth of said cavity (27) being greater than a height of the optical semiconductor element (41) when connected to said carrier (40); and

said cavity (27) is formed to define a location of said optical element (45;

61) in relation to said optical semiconductor element (41);

connecting (402) said optical semiconductor element (41) to said upper conductor structure (22;

43) in the cavity (27) formed by said patterned insulative spacer layer (26); and

providing (403;

601) said optical element (45;

61) in said location defined by said patterned insulative spacer layer (26).

16. A carrier (40) for enabling accurate positioning of an optical element (45;

61) in relation to a optical semiconductor element (41) to be connected to the carrier (40), said carrier comprising;

an electrically conductive multi-layer carrier base sheet (10) having an upper carrier layer (13), a lower carrier layer (14), and an intermediate carrier layer (12) between said upper and lower carrier layers, said upper (12) and intermediate (12) carrier layers having an upper conductor structure (22) formed therein; and

a patterned insulative spacer layer (26) arranged on an upper carrier layer side of said carrier base sheet (10),

wherein;

said insulative spacer layer (26) is patterned such that at least one cavity (27) is formed in which said optical semiconductor element (41) is connectable to said upper conductor structure (22), a depth of said cavity (27) being greater than a height of the optical semiconductor element (41) when connected to said carrier (40); and

said cavity (27) is formed to define a location of said optical element (45;

61) in relation to said optical semiconductor element (41).

17. A carrier (40) according to claim 16, further comprising:

an intermediate insulative layer arranged between said upper carrier layer (13) and said patterned insulative spacer layer (26),

wherein said intermediate insulative layer is configured such that electrical connection between connector bumps (42) provided on said optical semiconductor element (41) and said conductor structure (22;

43) is achievable through said intermediate insulative layer by applying heat and pressure to said optical semiconductor element when positioned on said intermediate film with said bumps facing the intermediate film and positions of the bumps corresponding to said conductor structure.

18. A carrier (40) according to claim 16, wherein said intermediate carrier layer (12) is made of a different metal than said upper and lower carrier layers (14, 13), said metal being selected such that said intermediate carrier layer is etchable by an etchant that leaves said upper and lower carrier layers substantially intact, thereby enabling under-etching of said upper carrier layer, such that recesses (23) are formed in said conductor structure (22), enabling improved anchoring of a subsequently applied encapsulant (46).

19. An optical semiconductor device (50;

60) comprising;

a carrier (40) according to claim 16;

a optical semiconductor element (41) which is connected to said upper conductor structure (22;

43) in the cavity (27) formed by said patterned insulative spacer layer (26); and

an optical element (45;

61) which is provided in said location defined by said patterned insulative spacer layer (26).

20. An optical semiconductor device (50;

60) according to claim 19, wherein said optical semiconductor element (41) is connected to said upper conductor structure (22) by bumps (42) provided on the optical semiconductor element (41) being connected with pads (43) comprised in the upper conductor structure (22).

21. An optical semiconductor device (60) according to claim 19, wherein an extension of said optical element (61) is determined by said cavity (27).

22. An optical semiconductor device (50) according to claim 19, wherein said optical element (45) is located in said location defined by said patterned insulative spacer layer (26);

and

a space defined by said cavity (27) and said optical element (45) is at least partially filled with a resilient optical compound (46), for reducing stress on the semiconductor device (41).