INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION
First Claim
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1. A method of fabricating a semiconductor device, comprising:
- providing a substrate including an insulating layer;
forming a trench in the insulating layer;
modifying the profile of the trench to provide a first width greater than a second width; and
forming a metal gate in the trench having the modifying profile.
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Abstract
A method is provided for forming a metal gate using a gate last process. A trench is formed on a substrate. The profile of the trench is modified to provide a first width at the aperture of the trench and a second width at the bottom of the trench. The profile may be formed by including tapered sidewalls. A metal gate may be formed in the trench having a modified profile. Also provided is a semiconductor device including a gate structure having a larger width at the top of the gate than the bottom of the gate.
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Citations
20 Claims
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1. A method of fabricating a semiconductor device, comprising:
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providing a substrate including an insulating layer; forming a trench in the insulating layer; modifying the profile of the trench to provide a first width greater than a second width; and forming a metal gate in the trench having the modifying profile. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device, comprising:
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a substrate; a source and a drain region formed on the substrate; and a gate structure disposed on the substrate between the source and drain regions, the gate structure including; a gate dielectric layer, wherein the gate dielectric includes a high-k dielectric material; and a metal gate electrode, wherein the metal gate electrode includes a tapered profile. - View Dependent Claims (12, 13, 14, 15)
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16. A method of semiconductor fabrication, comprising:
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providing a semiconductor substrate; forming a dummy gate structure on the substrate, wherein the dummy gate structure includes polysilicon; removing the dummy gate structure to provide a trench having a top portion and a bottom portion, wherein the top portion and the bottom portion are of a first width; increasing the width of the top portion of the trench to provide a second width; and forming a gate in the trench including the second width, wherein the forming the gate includes depositing a first metal layer into the trench. - View Dependent Claims (17, 18, 19, 20)
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Specification