×

INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION

  • US 20100044783A1
  • Filed: 11/21/2008
  • Published: 02/25/2010
  • Est. Priority Date: 08/20/2008
  • Status: Active Grant
First Claim
Patent Images

1. A method of fabricating a semiconductor device, comprising:

  • providing a substrate including an insulating layer;

    forming a trench in the insulating layer;

    modifying the profile of the trench to provide a first width greater than a second width; and

    forming a metal gate in the trench having the modifying profile.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×