INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION
First Claim
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1. A method of fabricating a semiconductor device, comprising:
- providing a semiconductor substrate;
forming an interface layer on the semiconductor substrate;
forming a first gate dielectric layer on the interface layer;
forming a metal layer on the first gate dielectric layer; and
oxidizing the metal layer to form a metal oxide layer, wherein the oxidizing the metal layer includes gettering oxygen from the interface layer.
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Abstract
A method of forming a gate structure is provided. The method includes providing a metal layer in the gate structure, the metal layer includes an oxygen-gettering composition. The metal layer getters oxygen from the interface layer, which may decrease the thickness of the interface layer. The gettered oxygen converts the metal layer to a metal oxide, which may act as a gate dielectric for the gate structure. A multi-layer metal gate structure is also provided including a oxygen-gettering metal layer, an oxygen-containing metal layer, and a polysilicon interface metal layer overlying a high-k gate dielectric.
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20 Claims
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1. A method of fabricating a semiconductor device, comprising:
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providing a semiconductor substrate; forming an interface layer on the semiconductor substrate; forming a first gate dielectric layer on the interface layer; forming a metal layer on the first gate dielectric layer; and oxidizing the metal layer to form a metal oxide layer, wherein the oxidizing the metal layer includes gettering oxygen from the interface layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 15, 16)
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10. A method of semiconductor device fabrication, comprising:
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providing a semiconductor substrate; forming an interfacial layer on the semiconductor substrate; depositing a high-k dielectric layer on the interfacial layer; forming a multi-layer metal gate on the high-k dielectric layer, wherein the multi-layer metal gate includes; forming a first metal layer, wherein the first metal layer includes an oxygen gettering composition; forming a second metal layer, wherein the second metal layer includes at least one of an oxidizable-composition and an oxygen-containing metal; and forming a third metal layer. - View Dependent Claims (11, 12, 13, 14)
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17. A semiconductor device, comprising:
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a gate dielectric layer; a gate electrode formed on the gate dielectric layer, wherein the gate electrode includes; a first metal layer, wherein the first metal layer includes an oxygen-gettering composition; a second metal layer overlying the first metal layer, wherein the second metal layer includes oxygen; a third metal layer on the second metal layer; and a polysilicon layer, wherein the third metal layer includes an interface with the polysilicon layer. - View Dependent Claims (18, 19, 20)
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Specification