THREE-DIMENSIONAL STRUCTURAL SEMICONDUCTOR DEVICE
First Claim
1. A three-dimensional structural semiconductor device, comprising:
- a first integrated circuit constructed so as to include a plurality of regions formed in a first semiconductor layer and a first wiring layer formed on the first semiconductor layer;
a first insulating layer laminated on the first wiring layer; and
a second integrated circuit constructed so as to include a plurality of regions formed in a second semiconductor layer laminated on the first insulating layer and a second wiring layer formed on the second semiconductor layer,wherein the first integrated circuit and the second integrated circuit are electrically connected by means of wiring penetrating in a laminated direction, and at least one of two-way data communication between the first integrated circuit and the second integrated circuit, supply of a control signal and supply of a clock signal is carried out via the penetrating wiring.
1 Assignment
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Accused Products
Abstract
A semiconductor device of three-dimensional structure in which the operating frequency of a chip can be raised while preventing the chip area from increasing. The three-dimensional structure semiconductor device have a first integrated circuit including a plurality of areas formed on a first conductor layer and a first wiring layer formed on the first conductor layer, a first insulating layer laminated on the first wiring layer, and a second integrated circuit including a plurality of areas formed on a second conductor layer which is laminated on the first insulating layer, and a second wiring layer formed on the second conductor layer. The first integrated circuit and the second integrated circuit are connected electrically by interconnection penetrating in the laminating direction and at least one of bidirectional communication of data, control signal supply, and clock signal supply between the first integrated circuit and the second integrated circuit is carried out through the penetrating interconnection.
36 Citations
18 Claims
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1. A three-dimensional structural semiconductor device, comprising:
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a first integrated circuit constructed so as to include a plurality of regions formed in a first semiconductor layer and a first wiring layer formed on the first semiconductor layer; a first insulating layer laminated on the first wiring layer; and a second integrated circuit constructed so as to include a plurality of regions formed in a second semiconductor layer laminated on the first insulating layer and a second wiring layer formed on the second semiconductor layer, wherein the first integrated circuit and the second integrated circuit are electrically connected by means of wiring penetrating in a laminated direction, and at least one of two-way data communication between the first integrated circuit and the second integrated circuit, supply of a control signal and supply of a clock signal is carried out via the penetrating wiring. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A three-dimensional structural semiconductor device, comprising:
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a first integrated circuit constructed so as to include a plurality of regions formed in a first semiconductor layer and a first wiring layer formed on the first semiconductor layer; a first insulating layer laminated on the first wiring layer; a second integrated circuit constructed so as to include a plurality of regions formed on a second semiconductor layer laminated on the first insulating layer and a second wiring layer formed on the second semiconductor layer; and penetration bus wiring that penetrates the first semiconductor layer and the second semiconductor layer in a laminated direction to electrically connect the first integrated circuit to the second integrated circuit.
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18. A method of manufacturing a three-dimensional structural semiconductor device, the method comprising:
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forming a first integrated circuit constructed so as to include a plurality of regions formed in a first semiconductor layer and a first wiring layer formed on the first semiconductor layer; forming a second integrated circuit constructed so as to include a plurality of regions formed on a second semiconductor layer laminated on a first insulating layer laminated on the first wiring layer, and a second wiring layer formed on the second semiconductor layer; forming penetration wiring that penetrates the first semiconductor layer and the second semiconductor layer in a laminated direction; and electrically connecting the first integrated circuit to the second integrated circuit by means of the penetration wiring.
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Specification